Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866914918740000768 |
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| author | Roy, Saurav Bhattacharyya, Arkka Peterson, Carl Krishnamoorthy, Sriram |
| author_facet | Roy, Saurav Bhattacharyya, Arkka Peterson, Carl Krishnamoorthy, Sriram |
| contents | In this article, we investigate the in-situ growth of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2$O$_3$ is grown within the same reactor as the $β$-Ga$_2$O$_3$, employing trimethylaluminum (TMAl) and O$_2$ as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed capacitance-voltage (C-V) and photo-assisted C-V methods. The high-temperature deposited dielectric demonstrates an impressive breakdown field of approximately 10 MV/cm. Furthermore, we evaluate the reliability and lifetime of the dielectrics using time-dependent dielectric breakdown (TDDB) measurements. By modifying the dielectric deposition process to include a high-temperature (800°C) thin interfacial layer and a low-temperature (600°C) bulk layer, we report a 10-year lifetime under a stress field of 3.5 MV/cm along a breakdown field of 7.8 MV/cm. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_11342 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ Roy, Saurav Bhattacharyya, Arkka Peterson, Carl Krishnamoorthy, Sriram Materials Science Applied Physics In this article, we investigate the in-situ growth of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2$O$_3$ is grown within the same reactor as the $β$-Ga$_2$O$_3$, employing trimethylaluminum (TMAl) and O$_2$ as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed capacitance-voltage (C-V) and photo-assisted C-V methods. The high-temperature deposited dielectric demonstrates an impressive breakdown field of approximately 10 MV/cm. Furthermore, we evaluate the reliability and lifetime of the dielectrics using time-dependent dielectric breakdown (TDDB) measurements. By modifying the dielectric deposition process to include a high-temperature (800°C) thin interfacial layer and a low-temperature (600°C) bulk layer, we report a 10-year lifetime under a stress field of 3.5 MV/cm along a breakdown field of 7.8 MV/cm. |
| title | Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2408.11342 |