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Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Roy, Saurav, Bhattacharyya, Arkka, Peterson, Carl, Krishnamoorthy, Sriram
Format:	Preprint
Publié:	2024
Sujets:	Materials Science Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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