Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4

Fuente: arXiv
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Autores principales: Lee, Ji-Eun, Wang, Aifeng, Chen, Shuzhang, Kwon, Minseong, Hwang, Jinwoong, Cho, Minhyun, Son, Ki-Hoon, Han, Dong-Soo, Choi, Jun Woo, Kim, Young Duck, Mo, Sung-Kwan, Petrovic, Cedomir, Hwang, Choongyu, Park, Se Young, Jang, Chaun, Ryu, Hyejin
Formato: Preprint
Publicado: 2024
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author Lee, Ji-Eun
Wang, Aifeng
Chen, Shuzhang
Kwon, Minseong
Hwang, Jinwoong
Cho, Minhyun
Son, Ki-Hoon
Han, Dong-Soo
Choi, Jun Woo
Kim, Young Duck
Mo, Sung-Kwan
Petrovic, Cedomir
Hwang, Choongyu
Park, Se Young
Jang, Chaun
Ryu, Hyejin
author_facet Lee, Ji-Eun
Wang, Aifeng
Chen, Shuzhang
Kwon, Minseong
Hwang, Jinwoong
Cho, Minhyun
Son, Ki-Hoon
Han, Dong-Soo
Choi, Jun Woo
Kim, Young Duck
Mo, Sung-Kwan
Petrovic, Cedomir
Hwang, Choongyu
Park, Se Young
Jang, Chaun
Ryu, Hyejin
contents The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.
format Preprint
id arxiv_https___arxiv_org_abs_2408_11658
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4
Lee, Ji-Eun
Wang, Aifeng
Chen, Shuzhang
Kwon, Minseong
Hwang, Jinwoong
Cho, Minhyun
Son, Ki-Hoon
Han, Dong-Soo
Choi, Jun Woo
Kim, Young Duck
Mo, Sung-Kwan
Petrovic, Cedomir
Hwang, Choongyu
Park, Se Young
Jang, Chaun
Ryu, Hyejin
Materials Science
Mesoscale and Nanoscale Physics
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.
title Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2408.11658