All-Electrical Layer-Spintronics in Altermagnetic Bilayer
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866917778933415936 |
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| author | Peng, Rui Yang, Jin Hu, Lin Ong, Wee-Liat Ho, Pin Lau, Chit Siong Liu, Junwei Ang, Yee Sin |
| author_facet | Peng, Rui Yang, Jin Hu, Lin Ong, Wee-Liat Ho, Pin Lau, Chit Siong Liu, Junwei Ang, Yee Sin |
| contents | Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other layer hosts a current with opposite spin polarization. An out-of-plane electric field breaks the layer degeneracy, leading to a gate-tunable spin-polarized current whose polarization can be fully reversed upon flipping the polarity of the electric field. Using first-principles calculations, we show that CrS bilayer with C-type antiferromagnetic exchange interaction exhibits a hidden layer-spin locking mechanism that enables the spin polarization of the transport current to be electrically manipulated via the layer degree of freedom. We demonstrate that sign-reversible spin polarization as high as 87% can be achieved at room temperature. This work presents the pioneering concept of layer-spintronics which synergizes altermagnetism and bilayer stacking to achieve efficient electrical control of spin. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_12504 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | All-Electrical Layer-Spintronics in Altermagnetic Bilayer Peng, Rui Yang, Jin Hu, Lin Ong, Wee-Liat Ho, Pin Lau, Chit Siong Liu, Junwei Ang, Yee Sin Mesoscale and Nanoscale Physics Materials Science Applied Physics Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other layer hosts a current with opposite spin polarization. An out-of-plane electric field breaks the layer degeneracy, leading to a gate-tunable spin-polarized current whose polarization can be fully reversed upon flipping the polarity of the electric field. Using first-principles calculations, we show that CrS bilayer with C-type antiferromagnetic exchange interaction exhibits a hidden layer-spin locking mechanism that enables the spin polarization of the transport current to be electrically manipulated via the layer degree of freedom. We demonstrate that sign-reversible spin polarization as high as 87% can be achieved at room temperature. This work presents the pioneering concept of layer-spintronics which synergizes altermagnetism and bilayer stacking to achieve efficient electrical control of spin. |
| title | All-Electrical Layer-Spintronics in Altermagnetic Bilayer |
| topic | Mesoscale and Nanoscale Physics Materials Science Applied Physics |
| url | https://arxiv.org/abs/2408.12504 |