Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866916932438982656 |
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| author | Yang, Tao Sekely, Ben Satapathy, Yashas Allion, Greg Barletta, Philip Haber, Carl Holland, Steve Muth, John F. Pavlidis, Spyridon Stucci, Stefania |
| author_facet | Yang, Tao Sekely, Ben Satapathy, Yashas Allion, Greg Barletta, Philip Haber, Carl Holland, Steve Muth, John F. Pavlidis, Spyridon Stucci, Stefania |
| contents | 4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with $α$ particles from a $^{210}_{84}\rm{Po}$ source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_12744 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs) Yang, Tao Sekely, Ben Satapathy, Yashas Allion, Greg Barletta, Philip Haber, Carl Holland, Steve Muth, John F. Pavlidis, Spyridon Stucci, Stefania Instrumentation and Detectors High Energy Physics - Experiment 4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with $α$ particles from a $^{210}_{84}\rm{Po}$ source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD. |
| title | Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs) |
| topic | Instrumentation and Detectors High Energy Physics - Experiment |
| url | https://arxiv.org/abs/2408.12744 |