Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
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arXiv
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866914924206227456 |
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| author | Xia, Zhanbo Joishi, Chandan Sohel, Shahadat H. Xie, Andy Beam, Edward Cao, Yu Rajan, Siddharth |
| author_facet | Xia, Zhanbo Joishi, Chandan Sohel, Shahadat H. Xie, Andy Beam, Edward Cao, Yu Rajan, Siddharth |
| contents | We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN base region, while the majority carrier holes for base current are injected from thick p-GaN regions adjacent to the thin p-GaN base. The design is realized using a regrowth emitter approach with SiO$_2$ as a spacer between the emitter layer and the thick p-GaN base contact regions. The fabricated device demonstrated state-of-art output current density (I$_{C, max}$) ~275 kA/cm$^2$ with a current gain ($β$) of 9, and 17 for the planar HBT design (I$_{C, max}$ =150 kA/cm$^2$). The reported results highlight the potential of the selective injection design to overcome the persistent GaN HBT design tradeoff between base resistance and current gain, paving the way for next-generation radio frequency and mm-Wave applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_14363 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density Xia, Zhanbo Joishi, Chandan Sohel, Shahadat H. Xie, Andy Beam, Edward Cao, Yu Rajan, Siddharth Applied Physics We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN base region, while the majority carrier holes for base current are injected from thick p-GaN regions adjacent to the thin p-GaN base. The design is realized using a regrowth emitter approach with SiO$_2$ as a spacer between the emitter layer and the thick p-GaN base contact regions. The fabricated device demonstrated state-of-art output current density (I$_{C, max}$) ~275 kA/cm$^2$ with a current gain ($β$) of 9, and 17 for the planar HBT design (I$_{C, max}$ =150 kA/cm$^2$). The reported results highlight the potential of the selective injection design to overcome the persistent GaN HBT design tradeoff between base resistance and current gain, paving the way for next-generation radio frequency and mm-Wave applications. |
| title | Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2408.14363 |