Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
Fuente:
arXiv
Saved in:
| Main Authors: | Xia, Zhanbo, Joishi, Chandan, Sohel, Shahadat H., Xie, Andy, Beam, Edward, Cao, Yu, Rajan, Siddharth |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
by: Rahman, Sheikh Ifatur, et al.
Published: (2024)
by: Rahman, Sheikh Ifatur, et al.
Published: (2024)
High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
by: Shin, Seungheon, et al.
Published: (2025)
by: Shin, Seungheon, et al.
Published: (2025)
Design and Simulation of a III-Nitride Light Emitting Transistor
by: Awwad, Mohammad, et al.
Published: (2024)
by: Awwad, Mohammad, et al.
Published: (2024)
Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications
by: Adam Jönsson, et al.
Published: (2024)
by: Adam Jönsson, et al.
Published: (2024)
Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
by: Shin, Seungheon, et al.
Published: (2025)
by: Shin, Seungheon, et al.
Published: (2025)
Investigation of Interlayer Dielectric in BaTiO3/III‐Nitride Transistors
by: Hyunsoo Lee, et al.
Published: (2024)
by: Hyunsoo Lee, et al.
Published: (2024)
High Breakdown Field Multi-kV UWBG AlGaN Transistors
by: Shin, Seungheon, et al.
Published: (2026)
by: Shin, Seungheon, et al.
Published: (2026)
Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs
by: Li, Xuefeng, et al.
Published: (2025)
by: Li, Xuefeng, et al.
Published: (2025)
SiO2‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors
by: Mirjam Henn, et al.
Published: (2024)
by: Mirjam Henn, et al.
Published: (2024)
Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
by: Zhu, Yinxuan, et al.
Published: (2024)
by: Zhu, Yinxuan, et al.
Published: (2024)
Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate
by: Tomoharu Sugino, et al.
Published: (2024)
by: Tomoharu Sugino, et al.
Published: (2024)
A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
by: Jamil, Tariq, et al.
Published: (2026)
by: Jamil, Tariq, et al.
Published: (2026)
Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy
by: Verma, Darpan, et al.
Published: (2020)
by: Verma, Darpan, et al.
Published: (2020)
Wavelength‐Dependent Bipolar Photoresponse Enabled All‐in‐One Optoelectronic Logic Gates on Epitaxial GaSe/GaN 2D‐3D Hybrid Heterojunctions
by: Yunan Lin, et al.
Published: (2025)
by: Yunan Lin, et al.
Published: (2025)
Overvoltage Failure Process of Cascode GaN Field Effect Transistors
by: Wataru Saito, et al.
Published: (2024)
by: Wataru Saito, et al.
Published: (2024)
Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
by: Date, Mihir, et al.
Published: (2017)
by: Date, Mihir, et al.
Published: (2017)
Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
by: Ki‐Sik Im, et al.
Published: (2024)
by: Ki‐Sik Im, et al.
Published: (2024)
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
by: Frank Brunner, et al.
Published: (2024)
by: Frank Brunner, et al.
Published: (2024)
Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications
by: Martinez, Rafael Perez, et al.
Published: (2024)
by: Martinez, Rafael Perez, et al.
Published: (2024)
A Temperature‐Dependent Linear RF Switch Model for Common‐Gate High‐Frequency GaN HEMT Transistors
by: Dave Frey, et al.
Published: (2025)
by: Dave Frey, et al.
Published: (2025)
Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
by: Zhou, Guangnan, et al.
Published: (2021)
by: Zhou, Guangnan, et al.
Published: (2021)
Source‐Connected Field‐Plate Effects on Static Current, Trap Signature, and Thermal Resistance of AlGaN/GaN High Electron Mobility Transistor
by: Vaidehi Vijay Painter, et al.
Published: (2026)
by: Vaidehi Vijay Painter, et al.
Published: (2026)
Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors
by: Ling‐Feng Mao
Published: (2024)
by: Ling‐Feng Mao
Published: (2024)
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
by: Alam, Md Tahmidul, et al.
Published: (2024)
by: Alam, Md Tahmidul, et al.
Published: (2024)
Temperature Effects on GaN/AlN Heterojunction in a Piezomagnetic and Piezoelectric Semiconductor Composite Fiber
by: QiaoYun Zhang, et al.
Published: (2024)
by: QiaoYun Zhang, et al.
Published: (2024)
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
by: Adamantia Logotheti, et al.
Published: (2024)
by: Adamantia Logotheti, et al.
Published: (2024)
Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz
by: Zhu, Yinxuan, et al.
Published: (2025)
by: Zhu, Yinxuan, et al.
Published: (2025)
Self‐Powered Photodetector Based on β‐Ga 2 O 3 / GaN Heterojunction With Enhanced UV Detectivity
by: Walid Filali, et al.
Published: (2026)
by: Walid Filali, et al.
Published: (2026)
Hot LO Phonon-Induced RF Nonlinearity in GaN High-Electron-Mobility Transistors
by: Dastider, Ankan Ghosh, et al.
Published: (2026)
by: Dastider, Ankan Ghosh, et al.
Published: (2026)
Modeling the Effects of Interface Traps on DC Characteristics in GaN High‐Electron‐Mobility Transistors
by: Amirali Chalechale, et al.
Published: (2025)
by: Amirali Chalechale, et al.
Published: (2025)
Nonresonant Terahertz Detector Based on Improved N‐Polar AlGaN/GaN Plasma Wave High‐Electron‐Mobility Transistors
by: Yang Dai, et al.
Published: (2024)
by: Yang Dai, et al.
Published: (2024)
Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique
by: Yihao Zhuang, et al.
Published: (2025)
by: Yihao Zhuang, et al.
Published: (2025)
Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform
by: Yuanlei Zhang, et al.
Published: (2024)
by: Yuanlei Zhang, et al.
Published: (2024)
Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices
by: Guye, Kidus, et al.
Published: (2026)
by: Guye, Kidus, et al.
Published: (2026)
Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs
by: Amer Bassal, et al.
Published: (2025)
by: Amer Bassal, et al.
Published: (2025)
Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
by: Maciej Kamiński, et al.
Published: (2024)
by: Maciej Kamiński, et al.
Published: (2024)
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
by: Liu, Yizheng, et al.
Published: (2025)
by: Liu, Yizheng, et al.
Published: (2025)
Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack
by: Tetsuo Narita, et al.
Published: (2024)
by: Tetsuo Narita, et al.
Published: (2024)
Optimizing AlInGaN/GaN High Electron‐Mobility Transistors for pH Sensing: A Temperature‐Dependent Modeling Approach
by: Kavita T. Upadhyay, et al.
Published: (2025)
by: Kavita T. Upadhyay, et al.
Published: (2025)
Polarization‐Engineered GaN‐Based High‐Electron‐Mobility Transistors for High Power RF Applications
by: Yu‐En Jeng, et al.
Published: (2025)
by: Yu‐En Jeng, et al.
Published: (2025)
Similar Items
-
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
by: Rahman, Sheikh Ifatur, et al.
Published: (2024) -
High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
by: Shin, Seungheon, et al.
Published: (2025) -
Design and Simulation of a III-Nitride Light Emitting Transistor
by: Awwad, Mohammad, et al.
Published: (2024) -
Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications
by: Adam Jönsson, et al.
Published: (2024) -
Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
by: Shin, Seungheon, et al.
Published: (2025)