Fast thermo-optic switching on silicon nitride platform through parity-time symmetry breaking

Fuente: arXiv
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Main Authors: Pradip, Ravi, Varri, Venkata Sai Akhil, McRae, Liam, Brückerhoff-Plückelmann, Frank, Wendland, Daniel, Ovvyan, Anna P., Taheriniya, Shabnam, Pernice, Wolfram, Ferrari, Simone
Format: Preprint
Published: 2024
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author Pradip, Ravi
Varri, Venkata Sai Akhil
McRae, Liam
Brückerhoff-Plückelmann, Frank
Wendland, Daniel
Ovvyan, Anna P.
Taheriniya, Shabnam
Pernice, Wolfram
Ferrari, Simone
author_facet Pradip, Ravi
Varri, Venkata Sai Akhil
McRae, Liam
Brückerhoff-Plückelmann, Frank
Wendland, Daniel
Ovvyan, Anna P.
Taheriniya, Shabnam
Pernice, Wolfram
Ferrari, Simone
contents This work demonstrates a fast thermo-optic switching mechanism on silicon nitride on insulator platform leveraging parity-time symmetry breaking. The cladding-free design enables low-loss optical propagation in a partially metal-covered waveguide, with the same metal layer serving as an integrated heater for rapid phase tuning. The fabricated device exhibits an 8.5 μs rise time for a π phase shift, despite the weak thermo-optic coefficient in silicon nitride. Additionally, the impact of thermal cross-talk is investigated and an insertion loss as low as 0.39 dB for a 100-μm-long heater-waveguide section is demonstrated.
format Preprint
id arxiv_https___arxiv_org_abs_2408_15139
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Fast thermo-optic switching on silicon nitride platform through parity-time symmetry breaking
Pradip, Ravi
Varri, Venkata Sai Akhil
McRae, Liam
Brückerhoff-Plückelmann, Frank
Wendland, Daniel
Ovvyan, Anna P.
Taheriniya, Shabnam
Pernice, Wolfram
Ferrari, Simone
Optics
Applied Physics
This work demonstrates a fast thermo-optic switching mechanism on silicon nitride on insulator platform leveraging parity-time symmetry breaking. The cladding-free design enables low-loss optical propagation in a partially metal-covered waveguide, with the same metal layer serving as an integrated heater for rapid phase tuning. The fabricated device exhibits an 8.5 μs rise time for a π phase shift, despite the weak thermo-optic coefficient in silicon nitride. Additionally, the impact of thermal cross-talk is investigated and an insertion loss as low as 0.39 dB for a 100-μm-long heater-waveguide section is demonstrated.
title Fast thermo-optic switching on silicon nitride platform through parity-time symmetry breaking
topic Optics
Applied Physics
url https://arxiv.org/abs/2408.15139