Salvato in:
| Autori principali: | , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2408.17382 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866912009070575616 |
|---|---|
| author | Conti, Pierandrea Dhomkar, Siddharth Ross, Philipp Mansir, John Morton, John J. L. |
| author_facet | Conti, Pierandrea Dhomkar, Siddharth Ross, Philipp Mansir, John Morton, John J. L. |
| contents | We explore the effects of stress on silicon donor bound exciton ($\mathrm{D^0X}$) transitions in bulk silicon and in microfabricated silicon devices. We first study $\mathrm{D^0X}$ transitions in an isotopically purified silicon-28 bulk doped sample under controlled uniaxial stress, confirming the validity of existing models in the low strain ($\lesssim 10^{-5}$) regime. We then demonstrate the localised photoconductive detection of a few thousand donors illuminated by a 1078 nm resonant laser with $4~\mathrm{μm}$ spot focused on a microfabricated device consisting of an implanted phosphorus layer between a pair of metallic contacts. We observe local variations in the strained exciton peak splitting from $10~\mathrm{μeV}$ to $200~\mathrm{μeV}$, and obtain scanning microscopy stress maps in good agreement with finite-element-model thermal stress simulations. Our results suggest a potential use of donor bound excitons for in-situ stress sensing, and demonstrate pathways for the miniaturisation of $\mathrm{D^0X}$ photoconductive detection. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_17382 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Donor-bound-exciton strain microscopy in silicon devices Conti, Pierandrea Dhomkar, Siddharth Ross, Philipp Mansir, John Morton, John J. L. Mesoscale and Nanoscale Physics We explore the effects of stress on silicon donor bound exciton ($\mathrm{D^0X}$) transitions in bulk silicon and in microfabricated silicon devices. We first study $\mathrm{D^0X}$ transitions in an isotopically purified silicon-28 bulk doped sample under controlled uniaxial stress, confirming the validity of existing models in the low strain ($\lesssim 10^{-5}$) regime. We then demonstrate the localised photoconductive detection of a few thousand donors illuminated by a 1078 nm resonant laser with $4~\mathrm{μm}$ spot focused on a microfabricated device consisting of an implanted phosphorus layer between a pair of metallic contacts. We observe local variations in the strained exciton peak splitting from $10~\mathrm{μeV}$ to $200~\mathrm{μeV}$, and obtain scanning microscopy stress maps in good agreement with finite-element-model thermal stress simulations. Our results suggest a potential use of donor bound excitons for in-situ stress sensing, and demonstrate pathways for the miniaturisation of $\mathrm{D^0X}$ photoconductive detection. |
| title | Donor-bound-exciton strain microscopy in silicon devices |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.17382 |