Measurements of dislocations in 4H-SiC with rocking curve imaging
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866916377018761216 |
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| author | Khaliq, Ahmar Wittwer, Felix Pyrlik, Niklas Fevola, Giovanni Patjens, Svenja Barp, Jackson Falkenberg, Gero Hampel, Sven Stuckelberger, Michael Garrevoet, Jan Bruckner, Dennis Modregger, Peter |
| author_facet | Khaliq, Ahmar Wittwer, Felix Pyrlik, Niklas Fevola, Giovanni Patjens, Svenja Barp, Jackson Falkenberg, Gero Hampel, Sven Stuckelberger, Michael Garrevoet, Jan Bruckner, Dennis Modregger, Peter |
| contents | 4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_00200 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Measurements of dislocations in 4H-SiC with rocking curve imaging Khaliq, Ahmar Wittwer, Felix Pyrlik, Niklas Fevola, Giovanni Patjens, Svenja Barp, Jackson Falkenberg, Gero Hampel, Sven Stuckelberger, Michael Garrevoet, Jan Bruckner, Dennis Modregger, Peter Materials Science 4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes. |
| title | Measurements of dislocations in 4H-SiC with rocking curve imaging |
| topic | Materials Science |
| url | https://arxiv.org/abs/2409.00200 |