>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866917765673123840 |
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| author | Gilankar, Advait Katta, Abishek Das, Nabasindhu Kalarickal, Nidhin Kurian |
| author_facet | Gilankar, Advait Katta, Abishek Das, Nabasindhu Kalarickal, Nidhin Kurian |
| contents | This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current state-of-the-art Ga2O3 HJDs, we achieve breakdown voltage exceeding 3 kV with a low turn on voltage (VON) of 0.8V, estimated at a forward current density (IF) of 1 A-cm-2. The measured devices exhibit excellent turn-on characteristics achieving 100 A-cm-2 current density at a forward bias of 1.5V along with a low differential specific on-resistance (Ron,sp) of 4.4 mΩ-cm2. The SM-JTE was realized using concentric NiO rings with varying widths and spacing that approximates a gradual reduction in JTE charge. The unipolar figure of merit (FOM) calculated exceeds 2 GW-cm2 and is among the best reported for devices with a sub-1V turn-on. The fabricated devices also displayed minimal change in forward I-V characteristics post reverse bias stress of 3 kV applied during breakdown voltage testing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_00344 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | >3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on Gilankar, Advait Katta, Abishek Das, Nabasindhu Kalarickal, Nidhin Kurian Applied Physics This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current state-of-the-art Ga2O3 HJDs, we achieve breakdown voltage exceeding 3 kV with a low turn on voltage (VON) of 0.8V, estimated at a forward current density (IF) of 1 A-cm-2. The measured devices exhibit excellent turn-on characteristics achieving 100 A-cm-2 current density at a forward bias of 1.5V along with a low differential specific on-resistance (Ron,sp) of 4.4 mΩ-cm2. The SM-JTE was realized using concentric NiO rings with varying widths and spacing that approximates a gradual reduction in JTE charge. The unipolar figure of merit (FOM) calculated exceeds 2 GW-cm2 and is among the best reported for devices with a sub-1V turn-on. The fabricated devices also displayed minimal change in forward I-V characteristics post reverse bias stress of 3 kV applied during breakdown voltage testing. |
| title | >3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2409.00344 |