Phonon-Assisted Photoluminescence and Exciton Recombination in Monolayer Aluminum Nitride
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arXiv
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| Autori principali: | , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866910586402504704 |
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| author | Yadav, Pushpendra Agarwal, Amit Bhattacharya, Sitangshu |
| author_facet | Yadav, Pushpendra Agarwal, Amit Bhattacharya, Sitangshu |
| contents | Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we demonstrate that hexagonal aluminum nitride (AlN) monolayers exhibit strong photoluminescence emission within the UV range of 3.94 - 4.05 eV. We show that these emissions in indirect bandgap AlN are facilitated by phonon modes with finite lattice momentum. These phonon modes promote efficient recombination of electrons and holes from the $Γ$ to K point of the Brillouin zone. Our findings provide a foundation for developing advanced optoelectronic devices and efficient UV light sources based on hexagonal AlN monolayers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_00850 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Phonon-Assisted Photoluminescence and Exciton Recombination in Monolayer Aluminum Nitride Yadav, Pushpendra Agarwal, Amit Bhattacharya, Sitangshu Mesoscale and Nanoscale Physics Materials Science Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we demonstrate that hexagonal aluminum nitride (AlN) monolayers exhibit strong photoluminescence emission within the UV range of 3.94 - 4.05 eV. We show that these emissions in indirect bandgap AlN are facilitated by phonon modes with finite lattice momentum. These phonon modes promote efficient recombination of electrons and holes from the $Γ$ to K point of the Brillouin zone. Our findings provide a foundation for developing advanced optoelectronic devices and efficient UV light sources based on hexagonal AlN monolayers. |
| title | Phonon-Assisted Photoluminescence and Exciton Recombination in Monolayer Aluminum Nitride |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2409.00850 |