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Main Authors: Li, Siying, Mei, Ming, Zhang, Kaijun, Zhang, Guojing
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2409.00990
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author Li, Siying
Mei, Ming
Zhang, Kaijun
Zhang, Guojing
author_facet Li, Siying
Mei, Ming
Zhang, Kaijun
Zhang, Guojing
contents In this paper, we study the optimal regularity of the stationary sonic-subsonic solution to the unipolar isothermal hydrodynamic model of semiconductors with sonic boundary. Applying the comparison principle and the energy estimate, we obtain the regularity of the sonic-subsonic solution as $C^{\frac{1}{2}}[0,1]\cap W^{1,p}(0,1)$ for any $p<2$, which is then proved to be optimal by analyzing the property of solution around the singular point on the sonic line, i.e., $ρ\notin C^ν[0,1]$ for any $ν>\frac{1}{2}$, and $ρ\notin W^{1,κ}(0,1)$ for any $κ\ge 2$. Furthermore, we explore the influence of the semiconductors effect on the singularity of solution at sonic points $x=1$ and $x=0$, that is, the solution always has strong singularity at sonic point $x=1$ for any relaxation time $τ>0$, but, once the relaxation time is sufficiently large $τ\gg 1$, then the sonic-subsonic steady-states possess the strong singularity at both sonic boundaries $x=0$ and $x=1$. We also show that the pure subsonic solution $ρ$ belongs to $W^{2,\infty}(0,1)$, which can be embedded into $C^{1,1}[0,1]$, and it is much better than the regularity of sonic-subsonic solutions.
format Preprint
id arxiv_https___arxiv_org_abs_2409_00990
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Optimal regularity of subsonic steady-states solution of Euler-Poisson equations for semiconductors with sonic boundary
Li, Siying
Mei, Ming
Zhang, Kaijun
Zhang, Guojing
Analysis of PDEs
In this paper, we study the optimal regularity of the stationary sonic-subsonic solution to the unipolar isothermal hydrodynamic model of semiconductors with sonic boundary. Applying the comparison principle and the energy estimate, we obtain the regularity of the sonic-subsonic solution as $C^{\frac{1}{2}}[0,1]\cap W^{1,p}(0,1)$ for any $p<2$, which is then proved to be optimal by analyzing the property of solution around the singular point on the sonic line, i.e., $ρ\notin C^ν[0,1]$ for any $ν>\frac{1}{2}$, and $ρ\notin W^{1,κ}(0,1)$ for any $κ\ge 2$. Furthermore, we explore the influence of the semiconductors effect on the singularity of solution at sonic points $x=1$ and $x=0$, that is, the solution always has strong singularity at sonic point $x=1$ for any relaxation time $τ>0$, but, once the relaxation time is sufficiently large $τ\gg 1$, then the sonic-subsonic steady-states possess the strong singularity at both sonic boundaries $x=0$ and $x=1$. We also show that the pure subsonic solution $ρ$ belongs to $W^{2,\infty}(0,1)$, which can be embedded into $C^{1,1}[0,1]$, and it is much better than the regularity of sonic-subsonic solutions.
title Optimal regularity of subsonic steady-states solution of Euler-Poisson equations for semiconductors with sonic boundary
topic Analysis of PDEs
url https://arxiv.org/abs/2409.00990