Saturable absorption in highly excited silicon and its suppression at the surface
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arXiv
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866929696452640768 |
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| author | Yamada, Shunsuke Otobe, Tomohito |
| author_facet | Yamada, Shunsuke Otobe, Tomohito |
| contents | Nonlinear electronic excitation in laser-irradiated silicon at finite electron temperatures is numerically investigated by first-principles calculations based on the time-dependent density functional theory. In bulk silicon at finite temperatures under near-infrared laser irradiation, we found that the absorbed energy is saturated when using a certain laser intensity even with a few-cycle pulse. Although one-photon processes of conduction-to-conduction and valence-to-valence transitions are dominant at such a laser intensity, the Pauli blocking inhibits further one-photon transition. With higher intensities, multi-photon excitation across the bandgap overwhelms the one-photon excitation and the saturable absorption disappears. At the surface of finite-temperature silicon, the Pauli blocking is suppressed by the symmetry breaking and the absorbed energy is relatively enhanced from the energy of the saturable absorption in the bulk region. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_02440 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Saturable absorption in highly excited silicon and its suppression at the surface Yamada, Shunsuke Otobe, Tomohito Materials Science Nonlinear electronic excitation in laser-irradiated silicon at finite electron temperatures is numerically investigated by first-principles calculations based on the time-dependent density functional theory. In bulk silicon at finite temperatures under near-infrared laser irradiation, we found that the absorbed energy is saturated when using a certain laser intensity even with a few-cycle pulse. Although one-photon processes of conduction-to-conduction and valence-to-valence transitions are dominant at such a laser intensity, the Pauli blocking inhibits further one-photon transition. With higher intensities, multi-photon excitation across the bandgap overwhelms the one-photon excitation and the saturable absorption disappears. At the surface of finite-temperature silicon, the Pauli blocking is suppressed by the symmetry breaking and the absorbed energy is relatively enhanced from the energy of the saturable absorption in the bulk region. |
| title | Saturable absorption in highly excited silicon and its suppression at the surface |
| topic | Materials Science |
| url | https://arxiv.org/abs/2409.02440 |