Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2024
|
| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2409.02440 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Tabla de Contenidos:
- Nonlinear electronic excitation in laser-irradiated silicon at finite electron temperatures is numerically investigated by first-principles calculations based on the time-dependent density functional theory. In bulk silicon at finite temperatures under near-infrared laser irradiation, we found that the absorbed energy is saturated when using a certain laser intensity even with a few-cycle pulse. Although one-photon processes of conduction-to-conduction and valence-to-valence transitions are dominant at such a laser intensity, the Pauli blocking inhibits further one-photon transition. With higher intensities, multi-photon excitation across the bandgap overwhelms the one-photon excitation and the saturable absorption disappears. At the surface of finite-temperature silicon, the Pauli blocking is suppressed by the symmetry breaking and the absorbed energy is relatively enhanced from the energy of the saturable absorption in the bulk region.