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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2409.03058 |
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| _version_ | 1866916382810046464 |
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| author | Wan, Jacky C. Arp, Trevor B. Gabor, Nathaniel M. |
| author_facet | Wan, Jacky C. Arp, Trevor B. Gabor, Nathaniel M. |
| contents | Hot, dense phases of Dirac fermions - predicted to resemble relativistic plasma - are uniquely accessible through photoexcitation of pristine, charge neutral graphene. We demonstrate a sensitive temperature probe of the photoexcited Dirac state, called interlayer optoelectronic thermometry, which measures out-of-plane transport of hot carriers in high-mobility, neutral graphene encapsulated within graphene-hBN-graphene heterostructures. At a critical intermediate sample temperature T = 50 K, the electronic temperature Te is quenched, exhibiting an intrinsic cooling rate that exceeds 10^14 Kelvin/s within the first picosecond after photoexcitation. Quenching is further enhanced by applying in-plane voltages within the stack-engineered heterostructure. Extreme sensitivity of Te to sample temperature and applied voltages reveals anomalously efficient hot-carrier quenching, which we identify as an essential feature of the strongly interacting hot Dirac excited state. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_03058 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Dirac excited state quenching in graphene Wan, Jacky C. Arp, Trevor B. Gabor, Nathaniel M. Mesoscale and Nanoscale Physics Hot, dense phases of Dirac fermions - predicted to resemble relativistic plasma - are uniquely accessible through photoexcitation of pristine, charge neutral graphene. We demonstrate a sensitive temperature probe of the photoexcited Dirac state, called interlayer optoelectronic thermometry, which measures out-of-plane transport of hot carriers in high-mobility, neutral graphene encapsulated within graphene-hBN-graphene heterostructures. At a critical intermediate sample temperature T = 50 K, the electronic temperature Te is quenched, exhibiting an intrinsic cooling rate that exceeds 10^14 Kelvin/s within the first picosecond after photoexcitation. Quenching is further enhanced by applying in-plane voltages within the stack-engineered heterostructure. Extreme sensitivity of Te to sample temperature and applied voltages reveals anomalously efficient hot-carrier quenching, which we identify as an essential feature of the strongly interacting hot Dirac excited state. |
| title | Dirac excited state quenching in graphene |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2409.03058 |