Simplified EPFL GaN HEMT Model
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866913492361019392 |
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| author | Jazaeri, Farzan Shalchian, Majid Yesayan, Ashkhen Rassekh, Amin Mangla, Anurag Parvais, Bertrand Sallese, Jean-Michel |
| author_facet | Jazaeri, Farzan Shalchian, Majid Yesayan, Ashkhen Rassekh, Amin Mangla, Anurag Parvais, Bertrand Sallese, Jean-Michel |
| contents | This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_03589 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Simplified EPFL GaN HEMT Model Jazaeri, Farzan Shalchian, Majid Yesayan, Ashkhen Rassekh, Amin Mangla, Anurag Parvais, Bertrand Sallese, Jean-Michel Applied Physics This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures. |
| title | Simplified EPFL GaN HEMT Model |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2409.03589 |