Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
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| Formato: | Preprint |
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2024
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| author | Ouaj, Taoufiq Arnold, Christophe Azpeitia, Jon Baltic, Sunaja Barjon, Julien Cascales, Jose Cun, Huanyao Esteban, David Garcia-Hernandez, Mar Garnier, Vincent Gautam, Subodh K. Greber, Thomas Hassani, Said Said Hemmi, Adrian Jimenéz, Ignacio Journet, Catherine Kögerler, Paul Loiseau, Annick Maestre, Camille Metzelaars, Marvin Schmidt, Philipp Stampfer, Christoph Stenger, Ingrid Steyer, Philippe Taniguchi, Takashi Toury, Bérangère Watanabe, Kenji Beschoten, Bernd |
| author_facet | Ouaj, Taoufiq Arnold, Christophe Azpeitia, Jon Baltic, Sunaja Barjon, Julien Cascales, Jose Cun, Huanyao Esteban, David Garcia-Hernandez, Mar Garnier, Vincent Gautam, Subodh K. Greber, Thomas Hassani, Said Said Hemmi, Adrian Jimenéz, Ignacio Journet, Catherine Kögerler, Paul Loiseau, Annick Maestre, Camille Metzelaars, Marvin Schmidt, Philipp Stampfer, Christoph Stenger, Ingrid Steyer, Philippe Taniguchi, Takashi Toury, Bérangère Watanabe, Kenji Beschoten, Bernd |
| contents | We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitride growth, over its optical characterization by time-resolved cathodoluminescence (TRCL), to the optical and electronic characterization of graphene by Raman spectroscopy after encapsulation and Hall bar processing. Within our benchmarking protocol we achieve a homogeneous electronic performance within each Hall bar device through a fast and reproducible processing routine. We find that a free exciton lifetime of 1 ns measured on as-grown hBN crystals by TRCL is sufficient to achieve high graphene room temperature charge carrier mobilities of 80,000 cm$^2$/(Vs) at a carrier density of |n| = 10$^{12}$ cm$^{-2}$, while respective exciton lifetimes around 100 ps yield mobilities up to 30,000 cm$^2$/(Vs). For scalable PVD-grown BN films, we measure carrier mobilities exceeding 10,000 cm$^2$/(Vs) which correlates with a graphene Raman 2D peak linewidth of 22 cm$^{-1}$. Our work highlights the importance of the Raman 2D linewidth of graphene as a critical metric that effectively assesses the interface quality (i.e. surface roughness) to the BN substrate, which directly affects the charge carrier mobility of graphene. Graphene 2D linewidth analysis is suitable for all BN substrates and is particularly advantageous when TRCL or BN Raman spectroscopy cannot be applied to specific BN materials such as amorphous or thin films. This underlines the superior role of spatially-resolved spectroscopy in the evaluation of BN crystals and films for the use of high-mobility graphene devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_03652 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures Ouaj, Taoufiq Arnold, Christophe Azpeitia, Jon Baltic, Sunaja Barjon, Julien Cascales, Jose Cun, Huanyao Esteban, David Garcia-Hernandez, Mar Garnier, Vincent Gautam, Subodh K. Greber, Thomas Hassani, Said Said Hemmi, Adrian Jimenéz, Ignacio Journet, Catherine Kögerler, Paul Loiseau, Annick Maestre, Camille Metzelaars, Marvin Schmidt, Philipp Stampfer, Christoph Stenger, Ingrid Steyer, Philippe Taniguchi, Takashi Toury, Bérangère Watanabe, Kenji Beschoten, Bernd Materials Science Mesoscale and Nanoscale Physics We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitride growth, over its optical characterization by time-resolved cathodoluminescence (TRCL), to the optical and electronic characterization of graphene by Raman spectroscopy after encapsulation and Hall bar processing. Within our benchmarking protocol we achieve a homogeneous electronic performance within each Hall bar device through a fast and reproducible processing routine. We find that a free exciton lifetime of 1 ns measured on as-grown hBN crystals by TRCL is sufficient to achieve high graphene room temperature charge carrier mobilities of 80,000 cm$^2$/(Vs) at a carrier density of |n| = 10$^{12}$ cm$^{-2}$, while respective exciton lifetimes around 100 ps yield mobilities up to 30,000 cm$^2$/(Vs). For scalable PVD-grown BN films, we measure carrier mobilities exceeding 10,000 cm$^2$/(Vs) which correlates with a graphene Raman 2D peak linewidth of 22 cm$^{-1}$. Our work highlights the importance of the Raman 2D linewidth of graphene as a critical metric that effectively assesses the interface quality (i.e. surface roughness) to the BN substrate, which directly affects the charge carrier mobility of graphene. Graphene 2D linewidth analysis is suitable for all BN substrates and is particularly advantageous when TRCL or BN Raman spectroscopy cannot be applied to specific BN materials such as amorphous or thin films. This underlines the superior role of spatially-resolved spectroscopy in the evaluation of BN crystals and films for the use of high-mobility graphene devices. |
| title | Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2409.03652 |