Evidence of Charge Multiplication in Thin $25 \mathrm{μm} \times 25 \mathrm{μm}$ Pitch 3D Silicon Sensors
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866909393313857536 |
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| author | Gentry, Andrew Boscardin, Maurizio Hoeferkamp, Martin Povoli, Marco Seidel, Sally Si, Jiahe Betta, Gian-Franco Dalla |
| author_facet | Gentry, Andrew Boscardin, Maurizio Hoeferkamp, Martin Povoli, Marco Seidel, Sally Si, Jiahe Betta, Gian-Franco Dalla |
| contents | Characterization measurements of $25~\mathrm{μm} \times 25~\mathrm{μm}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~μ$m. Evidence of charge multiplication caused by impact ionization below the breakdown voltage is observed in sensors operated at $-45~^\circ\mathrm{C}$. Small-pitch 3D silicon sensors have potential as high precision 4D tracking detectors that are also able to withstand radiation fluences beyond $10^{16}$~n$_{\rm eq}/$cm$^2$. This is applicable for use at future facilities such as the High-Luminosity Large Hadron Collider and the Future Circular Collider. Characteristics of these devices are compared to those of similar sensors of pitch $50~\mathrm{μm}\times 50~\mathrm{μm}$, showing comparable charge collection at low voltage, and acceptable leakage current, depletion voltage, breakdown voltage, and capacitance despite the extremely small cell size. The unirradiated $25~\mathrm{μm} \times 25~\mathrm{μm}$ sensors exhibit charge multiplication above about 90 V reverse bias, while, as predicted, no multiplication is observed in the $50~\mathrm{μm} \times 50~\mathrm{μm}$ sensors below their breakdown voltage. The maximum gain observed below breakdown is 1.33. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_03909 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Evidence of Charge Multiplication in Thin $25 \mathrm{μm} \times 25 \mathrm{μm}$ Pitch 3D Silicon Sensors Gentry, Andrew Boscardin, Maurizio Hoeferkamp, Martin Povoli, Marco Seidel, Sally Si, Jiahe Betta, Gian-Franco Dalla Instrumentation and Detectors Characterization measurements of $25~\mathrm{μm} \times 25~\mathrm{μm}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~μ$m. Evidence of charge multiplication caused by impact ionization below the breakdown voltage is observed in sensors operated at $-45~^\circ\mathrm{C}$. Small-pitch 3D silicon sensors have potential as high precision 4D tracking detectors that are also able to withstand radiation fluences beyond $10^{16}$~n$_{\rm eq}/$cm$^2$. This is applicable for use at future facilities such as the High-Luminosity Large Hadron Collider and the Future Circular Collider. Characteristics of these devices are compared to those of similar sensors of pitch $50~\mathrm{μm}\times 50~\mathrm{μm}$, showing comparable charge collection at low voltage, and acceptable leakage current, depletion voltage, breakdown voltage, and capacitance despite the extremely small cell size. The unirradiated $25~\mathrm{μm} \times 25~\mathrm{μm}$ sensors exhibit charge multiplication above about 90 V reverse bias, while, as predicted, no multiplication is observed in the $50~\mathrm{μm} \times 50~\mathrm{μm}$ sensors below their breakdown voltage. The maximum gain observed below breakdown is 1.33. |
| title | Evidence of Charge Multiplication in Thin $25 \mathrm{μm} \times 25 \mathrm{μm}$ Pitch 3D Silicon Sensors |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2409.03909 |