Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

Fuente: arXiv
Salvato in:
Dettagli Bibliografici
Autori principali: Bey, Sara, Fields, Shelby S., Combs, Nicholas G., Márkus, Bence G., Beke, Dávid, Wang, Jiashu, Ievlev, Anton V., Zhukovskyi, Maksym, Orlova, Tatyana, Forró, László, Bennett, Steven P., Liu, Xinyu, Assaf, Badih A.
Natura: Preprint
Pubblicazione: 2024
Soggetti:
Accesso online:
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
_version_ 1866929490690572288
author Bey, Sara
Fields, Shelby S.
Combs, Nicholas G.
Márkus, Bence G.
Beke, Dávid
Wang, Jiashu
Ievlev, Anton V.
Zhukovskyi, Maksym
Orlova, Tatyana
Forró, László
Bennett, Steven P.
Liu, Xinyu
Assaf, Badih A.
author_facet Bey, Sara
Fields, Shelby S.
Combs, Nicholas G.
Márkus, Bence G.
Beke, Dávid
Wang, Jiashu
Ievlev, Anton V.
Zhukovskyi, Maksym
Orlova, Tatyana
Forró, László
Bennett, Steven P.
Liu, Xinyu
Assaf, Badih A.
contents The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic α-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to α-MnTe grown on GaAs and is absent in α-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2409_04567
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films
Bey, Sara
Fields, Shelby S.
Combs, Nicholas G.
Márkus, Bence G.
Beke, Dávid
Wang, Jiashu
Ievlev, Anton V.
Zhukovskyi, Maksym
Orlova, Tatyana
Forró, László
Bennett, Steven P.
Liu, Xinyu
Assaf, Badih A.
Materials Science
Mesoscale and Nanoscale Physics
The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic α-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to α-MnTe grown on GaAs and is absent in α-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices.
title Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2409.04567