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Main Authors: Poveda-Hospital, Salvador, Quesada, Nicolás, Peter, Yves-Alain
Format: Preprint
Published: 2024
Subjects:
Online Access:https://arxiv.org/abs/2409.04586
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author Poveda-Hospital, Salvador
Quesada, Nicolás
Peter, Yves-Alain
author_facet Poveda-Hospital, Salvador
Quesada, Nicolás
Peter, Yves-Alain
contents We investigate the etching characteristics of PIN-PMN-PT crystals, exploring various wet etching solutions, reactive ion etching gases, and ion beam etching. The etch rate and surface roughness are systematically measured for each method. A process flow to obtain PIN-PMN-PT thin films is described and performed to later build a single mode rib waveguide. An integrated electro-optic phase modulator is fabricated by depositing electrodes on the sides of the waveguides. The electro-optic coefficient implied in our phase modulators is the $r_{51}/r_{42}$. The performances are tested achieving a $V_πL$ of 19.2 V$\cdot$cm.
format Preprint
id arxiv_https___arxiv_org_abs_2409_04586
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Etching Properties of PIN-PMN-PT and its Integration in Electro-Optic Phase Modulators
Poveda-Hospital, Salvador
Quesada, Nicolás
Peter, Yves-Alain
Optics
We investigate the etching characteristics of PIN-PMN-PT crystals, exploring various wet etching solutions, reactive ion etching gases, and ion beam etching. The etch rate and surface roughness are systematically measured for each method. A process flow to obtain PIN-PMN-PT thin films is described and performed to later build a single mode rib waveguide. An integrated electro-optic phase modulator is fabricated by depositing electrodes on the sides of the waveguides. The electro-optic coefficient implied in our phase modulators is the $r_{51}/r_{42}$. The performances are tested achieving a $V_πL$ of 19.2 V$\cdot$cm.
title Etching Properties of PIN-PMN-PT and its Integration in Electro-Optic Phase Modulators
topic Optics
url https://arxiv.org/abs/2409.04586