Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2409.05173 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866910594942107648 |
|---|---|
| author | Xu, Fengyu Wang, Jianyu Wang, Li |
| author_facet | Xu, Fengyu Wang, Jianyu Wang, Li |
| contents | Two-dimensional metal oxides play an important role in electronics and optoelectronics, and it is still a challenge to obtain thin oxides film. Here, a fluidic exfoliation method is applied to synthesis the metal oxides film by using galinstan as the reactant, and Ga2O3 film with ~1 cm size is obtained. Optical microscope and scanning electron microscope images show that the Ga2O3 film is exfoliated from the galinstan without any droplets left. Energy Dispersive X-Ray measurements confirm the existence of the Ga2O3 film. Transmission electron microscope and selected area electron diffraction patterns indicate the oxidation process do not have a prior direction. The alloy liquid based fluidic exfoliation method in room temperature provide a promising route for the synthesis of two-dimensional mental oxides, which shows significant applications in electronic and photoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_05173 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Room temperature synthesis of gallium oxide film with a fluidic exfoliation method Xu, Fengyu Wang, Jianyu Wang, Li Materials Science Mesoscale and Nanoscale Physics Two-dimensional metal oxides play an important role in electronics and optoelectronics, and it is still a challenge to obtain thin oxides film. Here, a fluidic exfoliation method is applied to synthesis the metal oxides film by using galinstan as the reactant, and Ga2O3 film with ~1 cm size is obtained. Optical microscope and scanning electron microscope images show that the Ga2O3 film is exfoliated from the galinstan without any droplets left. Energy Dispersive X-Ray measurements confirm the existence of the Ga2O3 film. Transmission electron microscope and selected area electron diffraction patterns indicate the oxidation process do not have a prior direction. The alloy liquid based fluidic exfoliation method in room temperature provide a promising route for the synthesis of two-dimensional mental oxides, which shows significant applications in electronic and photoelectronic devices. |
| title | Room temperature synthesis of gallium oxide film with a fluidic exfoliation method |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2409.05173 |