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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2409.05584 |
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| _version_ | 1866914944277020672 |
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| author | Dieny, Bernard Aggarwal, Sanjeev Naik, Vinayak Bharat Couet, Sebastien Coughlin, Thomas Fukami, Shunsuke Garello, Kevin Guedj, Jack Incorvia, Jean Anne C. Lebrun, Laurent Lee, Kyung-Jin Leonelli, Daniele Noh, Yonghwan Salimy, Siamak Soss, Steven Thomas, Luc Wang, Weigang Worledge, Daniel |
| author_facet | Dieny, Bernard Aggarwal, Sanjeev Naik, Vinayak Bharat Couet, Sebastien Coughlin, Thomas Fukami, Shunsuke Garello, Kevin Guedj, Jack Incorvia, Jean Anne C. Lebrun, Laurent Lee, Kyung-Jin Leonelli, Daniele Noh, Yonghwan Salimy, Siamak Soss, Steven Thomas, Luc Wang, Weigang Worledge, Daniel |
| contents | This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of magnetic fields are given. Based on the magnitude of commonly encountered external magnetic fields, we show below that magnetic immunity of STT-MRAM is sufficient for most uses once the chip is mounted on a printed circuit board (PCB) or inserted in its working environment. This statement is supported by the experience acquired during 60 years of use of magnetic hard disk drives (HDD) including 20 years of HDD with readers comprising magnetic tunnel junctions, 20+ years of use of magnetic field sensors as position encoders in automotive industry and 15+ years of use of MRAM. Mainly during chip handling does caution need to be exercised to avoid exposing the chip to excessively high magnetic fields. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_05584 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Impact of external magnetic fields on STT-MRAM Dieny, Bernard Aggarwal, Sanjeev Naik, Vinayak Bharat Couet, Sebastien Coughlin, Thomas Fukami, Shunsuke Garello, Kevin Guedj, Jack Incorvia, Jean Anne C. Lebrun, Laurent Lee, Kyung-Jin Leonelli, Daniele Noh, Yonghwan Salimy, Siamak Soss, Steven Thomas, Luc Wang, Weigang Worledge, Daniel Applied Physics This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of magnetic fields are given. Based on the magnitude of commonly encountered external magnetic fields, we show below that magnetic immunity of STT-MRAM is sufficient for most uses once the chip is mounted on a printed circuit board (PCB) or inserted in its working environment. This statement is supported by the experience acquired during 60 years of use of magnetic hard disk drives (HDD) including 20 years of HDD with readers comprising magnetic tunnel junctions, 20+ years of use of magnetic field sensors as position encoders in automotive industry and 15+ years of use of MRAM. Mainly during chip handling does caution need to be exercised to avoid exposing the chip to excessively high magnetic fields. |
| title | Impact of external magnetic fields on STT-MRAM |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2409.05584 |