Chip-integrated extended-cavity mode-locked laser in the visible
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arXiv
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866916508418965504 |
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| author | Winkler, Lisa V. Neijts, Govert Bastiaens, Hubertus J. M. Goodwin, Melissa J. van Rees, Albert Schrinner, Philip P. J. Hoekman, Marcel Dekker, Ronald Nascimento Jr., Adriano R. do van der Slot, Peter J. M. Nölleke, Christian Boller, Klaus-J. |
| author_facet | Winkler, Lisa V. Neijts, Govert Bastiaens, Hubertus J. M. Goodwin, Melissa J. van Rees, Albert Schrinner, Philip P. J. Hoekman, Marcel Dekker, Ronald Nascimento Jr., Adriano R. do van der Slot, Peter J. M. Nölleke, Christian Boller, Klaus-J. |
| contents | Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However additional challenges, such as a higher propagation loss and smaller alignment tolerances have prevented the realization of such lasers in the visible range. Here, we demonstrate the first chip-integrated mode-locked diode laser in the visible using an integrated photonic circuit for cavity extension. Based on a gallium arsenide gain chip and a low-loss silicon nitride feedback circuit, the laser is passively mode-locked using a saturable absorber implemented by focused ion beam milling. At a center wavelength of 642 nm, the laser shows an average output power of 3.4 mW, with a spectral bandwidth of 1.5 nm at a repetition rate of 7.84 GHz. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_05756 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Chip-integrated extended-cavity mode-locked laser in the visible Winkler, Lisa V. Neijts, Govert Bastiaens, Hubertus J. M. Goodwin, Melissa J. van Rees, Albert Schrinner, Philip P. J. Hoekman, Marcel Dekker, Ronald Nascimento Jr., Adriano R. do van der Slot, Peter J. M. Nölleke, Christian Boller, Klaus-J. Optics Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However additional challenges, such as a higher propagation loss and smaller alignment tolerances have prevented the realization of such lasers in the visible range. Here, we demonstrate the first chip-integrated mode-locked diode laser in the visible using an integrated photonic circuit for cavity extension. Based on a gallium arsenide gain chip and a low-loss silicon nitride feedback circuit, the laser is passively mode-locked using a saturable absorber implemented by focused ion beam milling. At a center wavelength of 642 nm, the laser shows an average output power of 3.4 mW, with a spectral bandwidth of 1.5 nm at a repetition rate of 7.84 GHz. |
| title | Chip-integrated extended-cavity mode-locked laser in the visible |
| topic | Optics |
| url | https://arxiv.org/abs/2409.05756 |