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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2409.05954 |
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| _version_ | 1866917771873353728 |
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| author | Schneider, Benjamin Prigozhin, Gregory Foster, Richard F. Bautz, Marshall W. Fu, Hope Grant, Catherine E. Heine, Sarah Juneau, Jill LaMarr, Beverly Limousin, Olivier Lourie, Nathan Malonis, Andrew Miller, Eric D. |
| author_facet | Schneider, Benjamin Prigozhin, Gregory Foster, Richard F. Bautz, Marshall W. Fu, Hope Grant, Catherine E. Heine, Sarah Juneau, Jill LaMarr, Beverly Limousin, Olivier Lourie, Nathan Malonis, Andrew Miller, Eric D. |
| contents | The advent of back-illuminated complementary metal-oxide-semiconductor (CMOS) sensors and their well-known advantages over charge-coupled devices (CCDs) make them an attractive technology for future X-ray missions. However, numerous challenges remain, including improving their depletion depth and identifying effective methods to calculate per-pixel gain conversion. We have tested a commercial Sony IMX290LLR CMOS sensor under X-ray light using an $^{55}$Fe radioactive source and collected X-ray photons for $\sim$15 consecutive days under stable conditions at regulated temperatures of 21°C and 26°C. At each temperature, the data set contained enough X-ray photons to produce one spectrum per pixel consisting only of single-pixel events. We determined the gain dispersion of its 2.1 million pixels using the peak fitting and the Energy Calibration by Correlation (ECC) methods. We measured a gain dispersion of 0.4\% at both temperatures and demonstrated the advantage of the ECC method in the case of spectra with low statistics. The energy resolution at 5.9 keV after the per-pixel gain correction is improved by $\gtrsim$10 eV for single-pixel and all event spectra, with single-pixel event energy resolution reaching $123.6\pm 0.2$ eV, close to the Fano limit of silicon sensors at room temperature. Finally, our long data acquisition demonstrated the excellent stability of the detector over more than 30 days under a flux of $10^4$ photons per second. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_05954 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | X-ray spectral performance of the Sony IMX290 CMOS sensor near Fano limit after a per-pixel gain calibration Schneider, Benjamin Prigozhin, Gregory Foster, Richard F. Bautz, Marshall W. Fu, Hope Grant, Catherine E. Heine, Sarah Juneau, Jill LaMarr, Beverly Limousin, Olivier Lourie, Nathan Malonis, Andrew Miller, Eric D. Instrumentation and Detectors Instrumentation and Methods for Astrophysics The advent of back-illuminated complementary metal-oxide-semiconductor (CMOS) sensors and their well-known advantages over charge-coupled devices (CCDs) make them an attractive technology for future X-ray missions. However, numerous challenges remain, including improving their depletion depth and identifying effective methods to calculate per-pixel gain conversion. We have tested a commercial Sony IMX290LLR CMOS sensor under X-ray light using an $^{55}$Fe radioactive source and collected X-ray photons for $\sim$15 consecutive days under stable conditions at regulated temperatures of 21°C and 26°C. At each temperature, the data set contained enough X-ray photons to produce one spectrum per pixel consisting only of single-pixel events. We determined the gain dispersion of its 2.1 million pixels using the peak fitting and the Energy Calibration by Correlation (ECC) methods. We measured a gain dispersion of 0.4\% at both temperatures and demonstrated the advantage of the ECC method in the case of spectra with low statistics. The energy resolution at 5.9 keV after the per-pixel gain correction is improved by $\gtrsim$10 eV for single-pixel and all event spectra, with single-pixel event energy resolution reaching $123.6\pm 0.2$ eV, close to the Fano limit of silicon sensors at room temperature. Finally, our long data acquisition demonstrated the excellent stability of the detector over more than 30 days under a flux of $10^4$ photons per second. |
| title | X-ray spectral performance of the Sony IMX290 CMOS sensor near Fano limit after a per-pixel gain calibration |
| topic | Instrumentation and Detectors Instrumentation and Methods for Astrophysics |
| url | https://arxiv.org/abs/2409.05954 |