Documenti analoghi

• Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate
  di: Hernandez, E. Nieto, et al.
  Pubblicazione: (2023)
• Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
  di: Hernández, E. Nieto, et al.
  Pubblicazione: (2023)
• Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
  di: Andrini, G., et al.
  Pubblicazione: (2023)
• Effects of localized laser-induced heating in the photoluminescence of silicon-vacancy color centers in 4H-SiC
  di: Misiara, Adolfo, et al.
  Pubblicazione: (2024)
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
  di: Zhang, Xueyue, et al.
  Pubblicazione: (2025)