Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition
Fuente:
arXiv
Guardado en:
| Autor principal: | Kumar, Deepak |
|---|---|
| Formato: | Preprint |
| Publicado: |
2024
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
por: Zhou, Chao, et al.
Publicado: (2026)
por: Zhou, Chao, et al.
Publicado: (2026)
Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography
por: Gao1, Xiaoyue, et al.
Publicado: (2024)
por: Gao1, Xiaoyue, et al.
Publicado: (2024)
Unveiling structure-property correlations in ferroelectric $Hf_{0.5}Zr_{0.5}O_2$ films using variational autoencoders
por: Alhada-Lahbabi, Kévin, et al.
Publicado: (2025)
por: Alhada-Lahbabi, Kévin, et al.
Publicado: (2025)
The coupling of polarization and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 thin films enables electrically controlled thermal memories above room temperature
por: Barneo, Didac, et al.
Publicado: (2025)
por: Barneo, Didac, et al.
Publicado: (2025)
Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
por: Zhou, Chao, et al.
Publicado: (2025)
por: Zhou, Chao, et al.
Publicado: (2025)
Resistive switching and charge accumulation in Hf0.5Zr0.5O2 nanoparticles
por: Pylypchuk, Oleksandr S., et al.
Publicado: (2025)
por: Pylypchuk, Oleksandr S., et al.
Publicado: (2025)
Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-based MFIM
por: Kim, Tae Ryong, et al.
Publicado: (2024)
por: Kim, Tae Ryong, et al.
Publicado: (2024)
Role of Oxygen Vacancies in Stabilizing the Orthorhombic Phases of Hf0.5Zr0.5O2 Nanoparticles
por: Zagorodniy, Yuriy O., et al.
Publicado: (2026)
por: Zagorodniy, Yuriy O., et al.
Publicado: (2026)
Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices
por: Presas, Priscila A. Tapia, et al.
Publicado: (2026)
por: Presas, Priscila A. Tapia, et al.
Publicado: (2026)
Photoinduced Patterning of Oxygen Vacancies to Promote the Ferroelectric Phase of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$
por: Beechem, Thomas E, et al.
Publicado: (2024)
por: Beechem, Thomas E, et al.
Publicado: (2024)
Multiple spiking functionalities in annealing-optimized Ag/Hf$_{0.5}$Zr$_{0.5}$O$_2$-based memristive neurons
por: Zhidkov, Nikita, et al.
Publicado: (2026)
por: Zhidkov, Nikita, et al.
Publicado: (2026)
Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films
por: Jung Woo Cho, et al.
Publicado: (2024)
por: Jung Woo Cho, et al.
Publicado: (2024)
History-dependent and frequency-dependent dielectric nonlinearities induced by polar nanoregions in a thin film of 0.5 ( Ba 0.7 Ca 0.3 TiO 3 ) -- 0.5 ( BaZr 0.2 Ti 0.8 O 3 )
por: Nadaud, Kevin, et al.
Publicado: (2025)
por: Nadaud, Kevin, et al.
Publicado: (2025)
Mechanism-Resolved PFM of Ferroionic and Ferroelectric Responses in Thickness-Gradient Hf0.5Zr0.5O2 Libraries
por: Liu, Yu, et al.
Publicado: (2026)
por: Liu, Yu, et al.
Publicado: (2026)
Tracking visible pulsed laser annealing of Hf$_{0.5}$Zr$_{0.5}$O$_2$ heterostructures with in situ transmission electron microscopy
por: Amini, Aida, et al.
Publicado: (2026)
por: Amini, Aida, et al.
Publicado: (2026)
Changing the properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ during cyclic repolarization of ferroelectric capacitors with different electrode materials
por: Zalyalov, Timur M., et al.
Publicado: (2022)
por: Zalyalov, Timur M., et al.
Publicado: (2022)
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
por: Afroze, Nashrah, et al.
Publicado: (2026)
por: Afroze, Nashrah, et al.
Publicado: (2026)
A Novel Methodology of Visualizing Orthorhombic Phase Uniformity in Ferroelectric Hf0.5Zr0.5O2 Devices Using Piezoresponse Force Microscopy
por: Peng, Wei-Cheng, et al.
Publicado: (2025)
por: Peng, Wei-Cheng, et al.
Publicado: (2025)
An Unsupervised Machine Learning-based Framework for Wafer Scale Variability Analysis and Performance Prediction of Ferroelectric Hf0.5Zr0.5O2 Thin Film Capacitors
por: Anu, Anika, et al.
Publicado: (2026)
por: Anu, Anika, et al.
Publicado: (2026)
Laser-induced demagnetization in a MAX phase (Cr0.5Mn0.5)2GaC
por: Mogunov, Iaroslav, et al.
Publicado: (2026)
por: Mogunov, Iaroslav, et al.
Publicado: (2026)
Microstructure-controlled vortex phases and two-phase superconductivity in (TaNb)0.7(HfZrTi)0.5 revealed by ac magnetostrictive coefficients
por: Yuan, Mengju, et al.
Publicado: (2026)
por: Yuan, Mengju, et al.
Publicado: (2026)
Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition
por: Chihwan An, et al.
Publicado: (2024)
por: Chihwan An, et al.
Publicado: (2024)
Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
por: Kun Chen, et al.
Publicado: (2024)
por: Kun Chen, et al.
Publicado: (2024)
Towards Improved Polarization Uniformity in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications
por: Srivari, Padma, et al.
Publicado: (2024)
por: Srivari, Padma, et al.
Publicado: (2024)
Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
por: Li, Xinye, et al.
Publicado: (2024)
por: Li, Xinye, et al.
Publicado: (2024)
Subcoercive-field dielectric response of $0.5(\text{Ba}_{0.7}\text{Ca}_{0.3}\text{TiO}_{3})-0.5(\text{BaZr}_{0.2}\text{Ti}_{0.8}\text{O}_{3})$ thin film: peculiar third harmonic signature of phase transitions and residual ferroelectricity
por: Nadaud, Kevin, et al.
Publicado: (2023)
por: Nadaud, Kevin, et al.
Publicado: (2023)
Effect of C additives with 0.5% in weight on structural, optical and superconducting properties of Ta-Nb-Hf-Zr-Ti high entropy alloy films
por: Le, Tien, et al.
Publicado: (2025)
por: Le, Tien, et al.
Publicado: (2025)
Superconducting Properties of Re 2 Zr 0.5 Hf 0.5 and Re 6 Zr 0.5 Hf 0.5 Alloys
por: Pavan Kumar Meena, et al.
Publicado: (2026)
por: Pavan Kumar Meena, et al.
Publicado: (2026)
Impact of HfO2 Dielectric Layer Placement in Hf0.5Zr0.5O2‐Based Ferroelectric Tunnel Junctions for Neuromorphic Applications
por: Juri Kim, et al.
Publicado: (2024)
por: Juri Kim, et al.
Publicado: (2024)
Fast Switching and High Polarization in Ferroelectric Hf 0.5 Zr 0.5 O 2 Films
por: Faizan Ali, et al.
Publicado: (2026)
por: Faizan Ali, et al.
Publicado: (2026)
Revealing the Role of Spacer Layer in Domain Dynamics of Hf0.5Zr0.5O2 Thin Films for Ferroelectrics
por: Ren‐Ci Peng, et al.
Publicado: (2024)
por: Ren‐Ci Peng, et al.
Publicado: (2024)
Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue
por: Zimeng Zhang, et al.
Publicado: (2024)
por: Zimeng Zhang, et al.
Publicado: (2024)
Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf 0.5 Zr 0.5 O 2 Capacitors and Characterization
por: Zichong Zhang, et al.
Publicado: (2026)
por: Zichong Zhang, et al.
Publicado: (2026)
Understanding and Tuning Mobile Interfaces in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films in Relation to Microstructure
por: Maximilian T. Becker, et al.
Publicado: (2026)
por: Maximilian T. Becker, et al.
Publicado: (2026)
Rhombohedral R3 Phase of Mn‐Doped Hf0.5Zr0.5O2 Epitaxial Films with Robust Ferroelectricity
por: Jiasheng Guo, et al.
Publicado: (2024)
por: Jiasheng Guo, et al.
Publicado: (2024)
Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
por: Hu, Tao, et al.
Publicado: (2024)
por: Hu, Tao, et al.
Publicado: (2024)
Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films
por: Sang Won An, et al.
Publicado: (2024)
por: Sang Won An, et al.
Publicado: (2024)
Performance of dopamine modified 0.5(Ba0.7Ca0.3)TiO3-0.5Ba(Zr0.2Ti0.8)O3 filler in PVDF nanocomposite as flexible energy storage and harvester
por: Mitharwal, Chhavi, et al.
Publicado: (2021)
por: Mitharwal, Chhavi, et al.
Publicado: (2021)
Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure
por: Hu, Tao, et al.
Publicado: (2024)
por: Hu, Tao, et al.
Publicado: (2024)
Magnetostriction in microwave synthesized La0.5Ba0.5CoO3
por: Manikandan, M., et al.
Publicado: (2022)
por: Manikandan, M., et al.
Publicado: (2022)
Ejemplares similares
-
Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
por: Zhou, Chao, et al.
Publicado: (2026) -
Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography
por: Gao1, Xiaoyue, et al.
Publicado: (2024) -
Unveiling structure-property correlations in ferroelectric $Hf_{0.5}Zr_{0.5}O_2$ films using variational autoencoders
por: Alhada-Lahbabi, Kévin, et al.
Publicado: (2025) -
The coupling of polarization and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 thin films enables electrically controlled thermal memories above room temperature
por: Barneo, Didac, et al.
Publicado: (2025) -
Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
por: Zhou, Chao, et al.
Publicado: (2025)