Characterization of Crystal Properties and Defects in CdZnTe Radiation Detectors
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866929495934500864 |
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| author | Ballester, Manuel Kaspar, Jaromir Massanes, Francesc Banerjee, Srutarshi Vija, Alexander Hans Katsaggelos, Aggelos K. |
| author_facet | Ballester, Manuel Kaspar, Jaromir Massanes, Francesc Banerjee, Srutarshi Vija, Alexander Hans Katsaggelos, Aggelos K. |
| contents | CdZnTe-based detectors are highly valued because of their high spectral resolution, which is an essential feature for nuclear medical imaging. However, this resolution is compromised when there are substantial defects in the CdZnTe crystals. In this study, we present a learning-based approach to determine the spatially dependent bulk properties and defects in semiconductor detectors. This characterization allows us to mitigate and compensate for the undesired effects caused by crystal impurities. We tested our model with computer-generated noise-free input data, where it showed excellent accuracy, achieving an average RMSE of 0.43% between the predicted and the ground truth crystal properties. In addition, a sensitivity analysis was performed to determine the effect of noisy data on the accuracy of the model. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_06738 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Characterization of Crystal Properties and Defects in CdZnTe Radiation Detectors Ballester, Manuel Kaspar, Jaromir Massanes, Francesc Banerjee, Srutarshi Vija, Alexander Hans Katsaggelos, Aggelos K. Materials Science Computational Physics CdZnTe-based detectors are highly valued because of their high spectral resolution, which is an essential feature for nuclear medical imaging. However, this resolution is compromised when there are substantial defects in the CdZnTe crystals. In this study, we present a learning-based approach to determine the spatially dependent bulk properties and defects in semiconductor detectors. This characterization allows us to mitigate and compensate for the undesired effects caused by crystal impurities. We tested our model with computer-generated noise-free input data, where it showed excellent accuracy, achieving an average RMSE of 0.43% between the predicted and the ground truth crystal properties. In addition, a sensitivity analysis was performed to determine the effect of noisy data on the accuracy of the model. |
| title | Characterization of Crystal Properties and Defects in CdZnTe Radiation Detectors |
| topic | Materials Science Computational Physics |
| url | https://arxiv.org/abs/2409.06738 |