Low-Temperature Electron Transport in [110] and [100] Silicon Nanowires: A DFT - Monte Carlo study
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866916546408873984 |
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| author | Shiri, Daryoush Nekovei, Reza Verma, Amit |
| author_facet | Shiri, Daryoush Nekovei, Reza Verma, Amit |
| contents | The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional theory (DFT), and Ensemble Monte Carlo (EMC) methods are used. Both acoustic and optical phonons are included in the electron-phonon scattering rate calculations covering both intra-subband and inter-subband events. A comparison with room temperature (300 K) characteristics shows that for both nanowires, the average electron steady-state drift velocity increases at least 2 times at relatively moderate electric fields and lower temperatures. Furthermore, the average drift velocity in [110] nanowires is 50 percent more than that of [100] nanowires, explained by the difference in their conduction subband effective mass. Transient average electron velocity suggests that there is a pronounced streaming electron motion at low temperature which is attributed to the reduced electron-phonon scattering rates. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_07282 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Low-Temperature Electron Transport in [110] and [100] Silicon Nanowires: A DFT - Monte Carlo study Shiri, Daryoush Nekovei, Reza Verma, Amit Mesoscale and Nanoscale Physics Materials Science Computational Physics Quantum Physics The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional theory (DFT), and Ensemble Monte Carlo (EMC) methods are used. Both acoustic and optical phonons are included in the electron-phonon scattering rate calculations covering both intra-subband and inter-subband events. A comparison with room temperature (300 K) characteristics shows that for both nanowires, the average electron steady-state drift velocity increases at least 2 times at relatively moderate electric fields and lower temperatures. Furthermore, the average drift velocity in [110] nanowires is 50 percent more than that of [100] nanowires, explained by the difference in their conduction subband effective mass. Transient average electron velocity suggests that there is a pronounced streaming electron motion at low temperature which is attributed to the reduced electron-phonon scattering rates. |
| title | Low-Temperature Electron Transport in [110] and [100] Silicon Nanowires: A DFT - Monte Carlo study |
| topic | Mesoscale and Nanoscale Physics Materials Science Computational Physics Quantum Physics |
| url | https://arxiv.org/abs/2409.07282 |