Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles

Fuente: arXiv
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Main Authors: Lihm, Jae-Mo, Park, Cheol-Hwan
Format: Preprint
Published: 2024
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author Lihm, Jae-Mo
Park, Cheol-Hwan
author_facet Lihm, Jae-Mo
Park, Cheol-Hwan
contents Although plasmons and phonons are the collective excitations that govern the low-energy physics of doped semiconductors, their nonadiabatic hybridization and mutual screening have not been studied from first principles. We achieve this goal by transforming the Dyson equation to the frequency-independent dynamical matrix of an equivalent damped oscillator. Calculations on doped GaAs and TiO2 agree well with available Raman data and await immediate experimental confirmation from infrared, neutron, electron-energy-loss, and angle-resolved photoemission spectroscopies.
format Preprint
id arxiv_https___arxiv_org_abs_2409_07393
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles
Lihm, Jae-Mo
Park, Cheol-Hwan
Materials Science
Mesoscale and Nanoscale Physics
Although plasmons and phonons are the collective excitations that govern the low-energy physics of doped semiconductors, their nonadiabatic hybridization and mutual screening have not been studied from first principles. We achieve this goal by transforming the Dyson equation to the frequency-independent dynamical matrix of an equivalent damped oscillator. Calculations on doped GaAs and TiO2 agree well with available Raman data and await immediate experimental confirmation from infrared, neutron, electron-energy-loss, and angle-resolved photoemission spectroscopies.
title Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2409.07393