Characterisation of analogue MAPS fabricated in 65 nm technology for the ALICE ITS3

Fuente: arXiv
Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Gautam, Kunal, Kumar, Ajit
Format: Preprint
Veröffentlicht: 2024
Schlagworte:
Online-Zugang:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
_version_ 1866909312870252544
author Gautam, Kunal
Kumar, Ajit
author_facet Gautam, Kunal
Kumar, Ajit
contents The ALICE ITS3 project foresees the use of ultra-light MAPS, developed in the 65 nm imaging process, for the vertex detector in the ALICE experiment at the LHC to drastically improve the vertexing performance. This new development, initiated by an international consortium of the ALICE ITS3 collaboration and the CERN EP R&D project, enhances the overall MAPS performance. Small-scale prototypes are designed to study the analogue properties of the TPSCo 65 nm technology and compare the charge collection performance in different processes, pitches, pixel geometries, and irradiation levels. Recent results from lab and test-beam characterisation detailing the efficiency and the spatial resolution of the APTS with different pixel geometries and pitches satisfy the ALICE ITS3 requirements. A quantitative evolution of the charge collection and sharing among pixels is evident in the CE-65 with different in-pixel readouts. Attaining a spatial resolution better than 3 $μ$m with a 10 $μ$m pitch and over 99% efficiency in the moderate irradiation environment of ALICE also supports the viability of using 65 nm MAPS for FCC-ee vertex detectors.
format Preprint
id arxiv_https___arxiv_org_abs_2409_07543
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Characterisation of analogue MAPS fabricated in 65 nm technology for the ALICE ITS3
Gautam, Kunal
Kumar, Ajit
Instrumentation and Detectors
High Energy Physics - Experiment
The ALICE ITS3 project foresees the use of ultra-light MAPS, developed in the 65 nm imaging process, for the vertex detector in the ALICE experiment at the LHC to drastically improve the vertexing performance. This new development, initiated by an international consortium of the ALICE ITS3 collaboration and the CERN EP R&D project, enhances the overall MAPS performance. Small-scale prototypes are designed to study the analogue properties of the TPSCo 65 nm technology and compare the charge collection performance in different processes, pitches, pixel geometries, and irradiation levels. Recent results from lab and test-beam characterisation detailing the efficiency and the spatial resolution of the APTS with different pixel geometries and pitches satisfy the ALICE ITS3 requirements. A quantitative evolution of the charge collection and sharing among pixels is evident in the CE-65 with different in-pixel readouts. Attaining a spatial resolution better than 3 $μ$m with a 10 $μ$m pitch and over 99% efficiency in the moderate irradiation environment of ALICE also supports the viability of using 65 nm MAPS for FCC-ee vertex detectors.
title Characterisation of analogue MAPS fabricated in 65 nm technology for the ALICE ITS3
topic Instrumentation and Detectors
High Energy Physics - Experiment
url https://arxiv.org/abs/2409.07543