High Performance Three-Terminal Thyristor RAM with a P+/P/N/P/N/N+ Doping Profile on a Silicon-Photonic CMOS Platform
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866917774561902592 |
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| author | Lee, Changseob Kwon, Ikhyeon Samanta, Anirban Li, Siwei Yoo, S. J. Ben |
| author_facet | Lee, Changseob Kwon, Ikhyeon Samanta, Anirban Li, Siwei Yoo, S. J. Ben |
| contents | 3T TRAM with doping profile (P+PNPNN+) is experimentally demonstrated on a silicon photonic platform. By using additional implant layers, this device provides excellent memory performance compared to the conventional structure (PNPN). TCAD is used to reflect the physical behavior, and the high-speed memory operations are described through the model. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_07598 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | High Performance Three-Terminal Thyristor RAM with a P+/P/N/P/N/N+ Doping Profile on a Silicon-Photonic CMOS Platform Lee, Changseob Kwon, Ikhyeon Samanta, Anirban Li, Siwei Yoo, S. J. Ben Systems and Control 3T TRAM with doping profile (P+PNPNN+) is experimentally demonstrated on a silicon photonic platform. By using additional implant layers, this device provides excellent memory performance compared to the conventional structure (PNPN). TCAD is used to reflect the physical behavior, and the high-speed memory operations are described through the model. |
| title | High Performance Three-Terminal Thyristor RAM with a P+/P/N/P/N/N+ Doping Profile on a Silicon-Photonic CMOS Platform |
| topic | Systems and Control |
| url | https://arxiv.org/abs/2409.07598 |