Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866910941753376768 |
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| author | Bhat, Aaditya Gilgenbach, Colin Kim, Junghwa Xu, Michael Zhu, Menglin LeBeau, James M. |
| author_facet | Bhat, Aaditya Gilgenbach, Colin Kim, Junghwa Xu, Michael Zhu, Menglin LeBeau, James M. |
| contents | Here, we evaluate multislice electron ptychography as a tool to carry out depth-resolved atomic resolution characterization of point defects, using silicon carbide as a case study. Through multislice electron scattering simulations and multislice ptychographic reconstructions, we investigate the phase contrast arising from individual silicon vacancies, antisite defects, and a wide range of substitutional transition metal dopants (V\textsubscript{Si} to W\textsubscript{Si}) and potential detectability. Simulating defect types, positions, and microscope conditions, we show that isolated point defects can be located within a unit cell along the sample's depth. The influence of electron energy, dose, defocus, and convergence semi-angle is also explored to determine their role in governing defect contrast. These results guide experiments aiming to analyze point defects with multislice electron ptychography. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_07663 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC Bhat, Aaditya Gilgenbach, Colin Kim, Junghwa Xu, Michael Zhu, Menglin LeBeau, James M. Materials Science Here, we evaluate multislice electron ptychography as a tool to carry out depth-resolved atomic resolution characterization of point defects, using silicon carbide as a case study. Through multislice electron scattering simulations and multislice ptychographic reconstructions, we investigate the phase contrast arising from individual silicon vacancies, antisite defects, and a wide range of substitutional transition metal dopants (V\textsubscript{Si} to W\textsubscript{Si}) and potential detectability. Simulating defect types, positions, and microscope conditions, we show that isolated point defects can be located within a unit cell along the sample's depth. The influence of electron energy, dose, defocus, and convergence semi-angle is also explored to determine their role in governing defect contrast. These results guide experiments aiming to analyze point defects with multislice electron ptychography. |
| title | Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC |
| topic | Materials Science |
| url | https://arxiv.org/abs/2409.07663 |