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Autores principales: Castro, J. O., Buyatti, B., Mercado, D., Di Donato, A., Quintero, M., Tortarolo, M.
Formato: Preprint
Publicado: 2024
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Acceso en línea:https://arxiv.org/abs/2409.08055
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author Castro, J. O.
Buyatti, B.
Mercado, D.
Di Donato, A.
Quintero, M.
Tortarolo, M.
author_facet Castro, J. O.
Buyatti, B.
Mercado, D.
Di Donato, A.
Quintero, M.
Tortarolo, M.
contents Future neuromorphic architectures will require millions of artificial synapses, making understanding the physical mechanisms behind their plasticity functionalities mandatory. In this work, we propose a simplified spin memristor, where the resistance can be controlled by magnetic field pulses, based on a Co/Pt multilayer with perpendicular magnetic anisotropy as a synapsis emulator. We demonstrate plasticity and spike time dependence plasticity (STDP) in this device and explored the underlying magnetic mechanisms using Kerr microscopy imaging and Hall magneto-transport measurements. A well-defined threshold for magnetization reversal and the continuous resistance states associated with the micromagnetic configuration are the basic properties allowing plasticity and STDP learning mechanisms in this device.
format Preprint
id arxiv_https___arxiv_org_abs_2409_08055
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Spike-timing-dependent-plasticity learning in a planar magnetic domain wall artificial synapsis
Castro, J. O.
Buyatti, B.
Mercado, D.
Di Donato, A.
Quintero, M.
Tortarolo, M.
Applied Physics
Emerging Technologies
Future neuromorphic architectures will require millions of artificial synapses, making understanding the physical mechanisms behind their plasticity functionalities mandatory. In this work, we propose a simplified spin memristor, where the resistance can be controlled by magnetic field pulses, based on a Co/Pt multilayer with perpendicular magnetic anisotropy as a synapsis emulator. We demonstrate plasticity and spike time dependence plasticity (STDP) in this device and explored the underlying magnetic mechanisms using Kerr microscopy imaging and Hall magneto-transport measurements. A well-defined threshold for magnetization reversal and the continuous resistance states associated with the micromagnetic configuration are the basic properties allowing plasticity and STDP learning mechanisms in this device.
title Spike-timing-dependent-plasticity learning in a planar magnetic domain wall artificial synapsis
topic Applied Physics
Emerging Technologies
url https://arxiv.org/abs/2409.08055