Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866914948069720064 |
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| author | Xu, Linqiang Hu, Yue Xu, Lianqiang Xu, Lin Li, Qiuhui Wang, Aili Lau, Chit Siong Lu, Jing Ang, Yee Sin |
| author_facet | Xu, Linqiang Hu, Yue Xu, Lianqiang Xu, Lin Li, Qiuhui Wang, Aili Lau, Chit Siong Lu, Jing Ang, Yee Sin |
| contents | Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for low-energy device operation. However, the n-type dominance of ultrathin oxide FET has hindered their integration into complementary metal-oxide-semiconductor (CMOS) technology, which requires both n-and p-type devices. Here we develop an ab initio device-driven computational screening workflow to identify sub-1-nm thickness oxide semiconductors for sub-5-nm FET applications. We demonstrate that ultrathin CaO2, CaO, and SrO are compatible with p-type device operations under both high-performance (HP) and low-power (LP) requirements specified by the International Technology Roadmap of Semiconductors (ITRS), thereby expanding the limited family of p-type oxide semiconductors. Notably, CaO and SrO emerge as the first-of-kind sub-1-nm thickness oxide semiconductors capable of simultaneously meeting the ITRS HP and LP criteria for both n-and p-type devices. CaO and SrO FETs outperform many existing low-dimensional semiconductors, exhibiting scalability below 5-nm gate length. Our findings offer a pioneering effort in the ab initio, device-driven screening of sub-1-nm thickness oxide semiconductors, significantly broadening the material candidate pool for future CMOS technology nodes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_08096 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes Xu, Linqiang Hu, Yue Xu, Lianqiang Xu, Lin Li, Qiuhui Wang, Aili Lau, Chit Siong Lu, Jing Ang, Yee Sin Materials Science Mesoscale and Nanoscale Physics Applied Physics Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for low-energy device operation. However, the n-type dominance of ultrathin oxide FET has hindered their integration into complementary metal-oxide-semiconductor (CMOS) technology, which requires both n-and p-type devices. Here we develop an ab initio device-driven computational screening workflow to identify sub-1-nm thickness oxide semiconductors for sub-5-nm FET applications. We demonstrate that ultrathin CaO2, CaO, and SrO are compatible with p-type device operations under both high-performance (HP) and low-power (LP) requirements specified by the International Technology Roadmap of Semiconductors (ITRS), thereby expanding the limited family of p-type oxide semiconductors. Notably, CaO and SrO emerge as the first-of-kind sub-1-nm thickness oxide semiconductors capable of simultaneously meeting the ITRS HP and LP criteria for both n-and p-type devices. CaO and SrO FETs outperform many existing low-dimensional semiconductors, exhibiting scalability below 5-nm gate length. Our findings offer a pioneering effort in the ab initio, device-driven screening of sub-1-nm thickness oxide semiconductors, significantly broadening the material candidate pool for future CMOS technology nodes. |
| title | Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2409.08096 |