Gate-defined single-electron transistors in twisted bilayer graphene

Fuente: arXiv

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Bibliographic Details
Main Authors:	Rothstein, Alexander, Fischer, Ammon, Achtermann, Anthony, Icking, Eike, Hecker, Katrin, Banszerus, Luca, Otto, Martin, Trellenkamp, Stefan, Lentz, Florian, Watanabe, Kenji, Taniguchi, Takashi, Beschoten, Bernd, Dolleman, Robin J., Kennes, Dante M., Stampfer, Christoph
Format:	Preprint
Published:	2024
Subjects:	Mesoscale and Nanoscale Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2409.08154