Artificial moiré engineering for an ideal BHZ model
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arXiv
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866911341689700352 |
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| author | Miao, Wangqian Rashidi, Arman Dai, Xi |
| author_facet | Miao, Wangqian Rashidi, Arman Dai, Xi |
| contents | We demonstrate that (001) grown Cd3As2 thin films with a superlattice-patterned gate can potentially realize the moiré Bernevig-Hughes-Zhang (BHZ) model. Our calculations identify the parameterization region necessary to achieve topological flat mini-bands with a C4z symmetric and a C6z symmetric potential. Additionally, we show that a spin-polarized state can serve as the minimal platform for hosting the moiré induced quantum anomalous Hall effect, supported by Hartree Fock interaction kernel analysis and self-consistent mean field calculations. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_08540 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Artificial moiré engineering for an ideal BHZ model Miao, Wangqian Rashidi, Arman Dai, Xi Mesoscale and Nanoscale Physics We demonstrate that (001) grown Cd3As2 thin films with a superlattice-patterned gate can potentially realize the moiré Bernevig-Hughes-Zhang (BHZ) model. Our calculations identify the parameterization region necessary to achieve topological flat mini-bands with a C4z symmetric and a C6z symmetric potential. Additionally, we show that a spin-polarized state can serve as the minimal platform for hosting the moiré induced quantum anomalous Hall effect, supported by Hartree Fock interaction kernel analysis and self-consistent mean field calculations. |
| title | Artificial moiré engineering for an ideal BHZ model |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2409.08540 |