Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition

Fuente: arXiv
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Autori principali: Mahmoudi, Aymen, Bouaziz, Meryem, Romani, Davide, Pala, Marco, Thieffry, Aurelien, Brule, Thibault, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim
Natura: Preprint
Pubblicazione: 2024
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author Mahmoudi, Aymen
Bouaziz, Meryem
Romani, Davide
Pala, Marco
Thieffry, Aurelien
Brule, Thibault
Chaste, Julien
Oehler, Fabrice
Ouerghi, Abdelkarim
author_facet Mahmoudi, Aymen
Bouaziz, Meryem
Romani, Davide
Pala, Marco
Thieffry, Aurelien
Brule, Thibault
Chaste, Julien
Oehler, Fabrice
Ouerghi, Abdelkarim
contents The stacking order of two-dimensional transition metal dichalcogenides (TMDs) is attracting tremendous interest as an essential component of van der Waals heterostructures. A common and fast approach to distinguish between the AAprime (2H) and AB (3R) configurations uses the relative edge orientation of each triangular layer (theta) from optical images. Here, we highlight that this method alone is not sufficient to fully identify the stacking order. Instead we propose a model and methodology to accurately determine the bilayer configuration of WSe2 using second harmonic generation (SHG) and Raman spectroscopy. We demonstrate that the SHG response of the AB phase (theta = 0) deg layers is more intense than the signal from the single layer structure. However, the SHG totally vanishes in the AAprime and ABprime phases (theta = 60 deg) and 0 deg respectively) of homo-bilayer WSe2. Also, several optical features of homo-bilayer WSe2 are found to depend on the details of the stacking order, with the difference being the clearest in the low frequency (LF) Raman frequencies, as confirmed by DFT simulation. This allows unambiguous, high-throughput, nondestructive identification of stacking order in TMDs, which is not robustly addressed in this emerging research area.
format Preprint
id arxiv_https___arxiv_org_abs_2409_08617
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Mahmoudi, Aymen
Bouaziz, Meryem
Romani, Davide
Pala, Marco
Thieffry, Aurelien
Brule, Thibault
Chaste, Julien
Oehler, Fabrice
Ouerghi, Abdelkarim
Materials Science
Mesoscale and Nanoscale Physics
The stacking order of two-dimensional transition metal dichalcogenides (TMDs) is attracting tremendous interest as an essential component of van der Waals heterostructures. A common and fast approach to distinguish between the AAprime (2H) and AB (3R) configurations uses the relative edge orientation of each triangular layer (theta) from optical images. Here, we highlight that this method alone is not sufficient to fully identify the stacking order. Instead we propose a model and methodology to accurately determine the bilayer configuration of WSe2 using second harmonic generation (SHG) and Raman spectroscopy. We demonstrate that the SHG response of the AB phase (theta = 0) deg layers is more intense than the signal from the single layer structure. However, the SHG totally vanishes in the AAprime and ABprime phases (theta = 60 deg) and 0 deg respectively) of homo-bilayer WSe2. Also, several optical features of homo-bilayer WSe2 are found to depend on the details of the stacking order, with the difference being the clearest in the low frequency (LF) Raman frequencies, as confirmed by DFT simulation. This allows unambiguous, high-throughput, nondestructive identification of stacking order in TMDs, which is not robustly addressed in this emerging research area.
title Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2409.08617