Koo, J., & Kim, C. (2024). A new critical growth parameter and mechanistic model for SiC nanowire synthesis via Si substrate carbonization: The role of H$_2$/CH$_4$ gas flow ratio.
Chicago Style (17th ed.) CitationKoo, Junghyun, and Chinkyo Kim. A New Critical Growth Parameter and Mechanistic Model for SiC Nanowire Synthesis via Si Substrate Carbonization: The Role of H$_2$/CH$_4$ Gas Flow Ratio. 2024.
MLA (9th ed.) CitationKoo, Junghyun, and Chinkyo Kim. A New Critical Growth Parameter and Mechanistic Model for SiC Nanowire Synthesis via Si Substrate Carbonization: The Role of H$_2$/CH$_4$ Gas Flow Ratio. 2024.
Warning: These citations may not always be 100% accurate.