Increased Brightness and Reduced Efficiency Droop in Perovskite Quantum Dot Light-Emitting Diodes using Carbazole-Based Phosphonic Acid Interface Modifiers

Fuente: arXiv
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Autori principali: Shen, Gillian, Zhang, Yadong, Juarez, Julisa, Contreras, Hannah, Sindt, Collin, Xu, Yiman, Kline, Jessica, Barlow, Stephen, Reichmanis, Elsa, Marder, Seth R., Ginger, David S.
Natura: Preprint
Pubblicazione: 2024
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author Shen, Gillian
Zhang, Yadong
Juarez, Julisa
Contreras, Hannah
Sindt, Collin
Xu, Yiman
Kline, Jessica
Barlow, Stephen
Reichmanis, Elsa
Marder, Seth R.
Ginger, David S.
author_facet Shen, Gillian
Zhang, Yadong
Juarez, Julisa
Contreras, Hannah
Sindt, Collin
Xu, Yiman
Kline, Jessica
Barlow, Stephen
Reichmanis, Elsa
Marder, Seth R.
Ginger, David S.
contents We demonstrate the use of [2-($\textit{9H}$-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and [2-(3,6-di-$\textit{tert}$-butyl-$\textit{9H}$-carbazol-9-yl)ethyl]phosphonic acid (t-Bu-2PACz) as anode modification layers in metal-halide perovskite quantum dot light-emitting diodes (QLEDs). Compared to conventional QLED structures with PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate)/PVK (poly(9-vinylcarbazole)) hole-transport layers, QLEDs made with phosphonic acid (PA)-modified indium tin oxide (ITO) anodes show an over 7-fold increase in brightness, achieving a brightness of 373,000 cd m$^{-2}$, one of the highest brightnesses reported to date for colloidal perovskite QLEDs. Importantly, the onset of efficiency roll-off, or efficiency droop, occurs at ~1000-fold higher current density for QLEDs made with PA-modified anodes compared to control QLEDs made with conventional PEDOT:PSS/PVK hole transport layers, allowing the devices to sustain significantly higher levels of external quantum efficiency at a brightness of >10$^{5}$ cd m$^{-2}$. Steady-state and time-resolved photoluminescence measurements indicate these improvements are due to a combination of multiple factors, including reducing quenching of photoluminescence at the PEDOT:PSS interface and reducing photoluminescence efficiency loss at high levels of current density.
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id arxiv_https___arxiv_org_abs_2409_09556
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Increased Brightness and Reduced Efficiency Droop in Perovskite Quantum Dot Light-Emitting Diodes using Carbazole-Based Phosphonic Acid Interface Modifiers
Shen, Gillian
Zhang, Yadong
Juarez, Julisa
Contreras, Hannah
Sindt, Collin
Xu, Yiman
Kline, Jessica
Barlow, Stephen
Reichmanis, Elsa
Marder, Seth R.
Ginger, David S.
Materials Science
Mesoscale and Nanoscale Physics
We demonstrate the use of [2-($\textit{9H}$-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and [2-(3,6-di-$\textit{tert}$-butyl-$\textit{9H}$-carbazol-9-yl)ethyl]phosphonic acid (t-Bu-2PACz) as anode modification layers in metal-halide perovskite quantum dot light-emitting diodes (QLEDs). Compared to conventional QLED structures with PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate)/PVK (poly(9-vinylcarbazole)) hole-transport layers, QLEDs made with phosphonic acid (PA)-modified indium tin oxide (ITO) anodes show an over 7-fold increase in brightness, achieving a brightness of 373,000 cd m$^{-2}$, one of the highest brightnesses reported to date for colloidal perovskite QLEDs. Importantly, the onset of efficiency roll-off, or efficiency droop, occurs at ~1000-fold higher current density for QLEDs made with PA-modified anodes compared to control QLEDs made with conventional PEDOT:PSS/PVK hole transport layers, allowing the devices to sustain significantly higher levels of external quantum efficiency at a brightness of >10$^{5}$ cd m$^{-2}$. Steady-state and time-resolved photoluminescence measurements indicate these improvements are due to a combination of multiple factors, including reducing quenching of photoluminescence at the PEDOT:PSS interface and reducing photoluminescence efficiency loss at high levels of current density.
title Increased Brightness and Reduced Efficiency Droop in Perovskite Quantum Dot Light-Emitting Diodes using Carbazole-Based Phosphonic Acid Interface Modifiers
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2409.09556