Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect
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arXiv
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2024
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| _version_ | 1866914949422383104 |
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| author | Liu, Jiuming Rong, Bin Bai, Hua Liu, Xinqi Liu, Yanghui Zhang, Yifan Xiao, Yujie Liang, Yuzhen Yao, Qi Liao, Liyang Yang, Yumeng Song, Cheng Kou, Xufeng |
| author_facet | Liu, Jiuming Rong, Bin Bai, Hua Liu, Xinqi Liu, Yanghui Zhang, Yifan Xiao, Yujie Liang, Yuzhen Yao, Qi Liao, Liyang Yang, Yumeng Song, Cheng Kou, Xufeng |
| contents | The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here we apply the device structural engineering to realize an in-plane inhomogeneous temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic resistance whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the applied current. By optimizing the aspect ratio of convex-shaped device, the effective temperature gradient can reach up to 0.3 K/$μ$m along the y-direction, leading to a GANE signal of 28.3 $μ$V. Moreover, we demonstrate electrical write and read operations in the perpendicularly-magnetized Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_09587 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect Liu, Jiuming Rong, Bin Bai, Hua Liu, Xinqi Liu, Yanghui Zhang, Yifan Xiao, Yujie Liang, Yuzhen Yao, Qi Liao, Liyang Yang, Yumeng Song, Cheng Kou, Xufeng Mesoscale and Nanoscale Physics Applied Physics The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here we apply the device structural engineering to realize an in-plane inhomogeneous temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic resistance whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the applied current. By optimizing the aspect ratio of convex-shaped device, the effective temperature gradient can reach up to 0.3 K/$μ$m along the y-direction, leading to a GANE signal of 28.3 $μ$V. Moreover, we demonstrate electrical write and read operations in the perpendicularly-magnetized Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories |
| title | Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2409.09587 |