Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
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arXiv
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| Format: | Preprint |
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2024
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| author | Wang, Ning Wang, Shao-Min Zhang, Run-Ze Kang, Jia-Min Lu, Wen-Long Li, Hai-Ou Cao, Gang Wang, Bao-Chuan Guo, Guo-Ping |
| author_facet | Wang, Ning Wang, Shao-Min Zhang, Run-Ze Kang, Jia-Min Lu, Wen-Long Li, Hai-Ou Cao, Gang Wang, Bao-Chuan Guo, Guo-Ping |
| contents | Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit Controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with a fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_09747 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot Wang, Ning Wang, Shao-Min Zhang, Run-Ze Kang, Jia-Min Lu, Wen-Long Li, Hai-Ou Cao, Gang Wang, Bao-Chuan Guo, Guo-Ping Mesoscale and Nanoscale Physics Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit Controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with a fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise. |
| title | Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2409.09747 |