Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
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arXiv
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| Autores principales: | , , , , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866912029175971840 |
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| author | Zhou, Jie Vincent, Daniel Acharya, Sudip Ojo, Solomon Abrand, Alireza Liu, Yang Gong, Jiarui Liu, Dong Haessly, Samuel Shen, Jianping Xu, Shining Li, Yiran Lu, Yi Stanchu, Hryhorii Mawst, Luke Claflin, Bruce Mohseni, Parsian K. Ma, Zhenqiang Yu, Shui-Qing |
| author_facet | Zhou, Jie Vincent, Daniel Acharya, Sudip Ojo, Solomon Abrand, Alireza Liu, Yang Gong, Jiarui Liu, Dong Haessly, Samuel Shen, Jianping Xu, Shining Li, Yiran Lu, Yi Stanchu, Hryhorii Mawst, Luke Claflin, Bruce Mohseni, Parsian K. Ma, Zhenqiang Yu, Shui-Qing |
| contents | Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_09752 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K Zhou, Jie Vincent, Daniel Acharya, Sudip Ojo, Solomon Abrand, Alireza Liu, Yang Gong, Jiarui Liu, Dong Haessly, Samuel Shen, Jianping Xu, Shining Li, Yiran Lu, Yi Stanchu, Hryhorii Mawst, Luke Claflin, Bruce Mohseni, Parsian K. Ma, Zhenqiang Yu, Shui-Qing Optics Materials Science Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers. |
| title | Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K |
| topic | Optics Materials Science |
| url | https://arxiv.org/abs/2409.09752 |