Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical cavities
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| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866915633445208064 |
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| author | Pan, Feng Li, Xin Johnson, Amalya C. Dhuey, Scott Saunders, Ashley Hu, Meng-Xia Dixon, Jefferson P. Dagli, Sahil Lau, Sze-Cheung Weng, Tingting Chen, Chih-Yi Zeng, Jun-Hao Apte, Rajas Heinz, Tony F. Liu, Fang Deng, Zi-Lan Dionne, Jennifer A. |
| author_facet | Pan, Feng Li, Xin Johnson, Amalya C. Dhuey, Scott Saunders, Ashley Hu, Meng-Xia Dixon, Jefferson P. Dagli, Sahil Lau, Sze-Cheung Weng, Tingting Chen, Chih-Yi Zeng, Jun-Hao Apte, Rajas Heinz, Tony F. Liu, Fang Deng, Zi-Lan Dionne, Jennifer A. |
| contents | Transition metal dichalcogenides possess valley pseudospin, enabling coupling between photon spin and electron spin for classical and quantum information processing. However, rapid valley-dephasing processes have impeded the development of scalable, high-performance valleytronic devices operating at room temperature. Here we demonstrate that a chiral resonant metasurface can enable room-temperature valley-selective emission in MoSe2 monolayers independent of excitation polarization. This platform provides circular eigen-polarization states with a high quality factor (Q-factor) and strong chiral near-field enhancement. The fabricated Si chiral metasurfaces exhibit chiroptical resonances with Q-factors up to 450 at visible wavelengths. We reveal degrees of circular polarization (DOP) reaching a record high of 0.5 at room temperature. Our measurements show that the high DOP can be attributed to the significantly increased chiroptical local density of states, which enhances valley-specific radiative transition rates by a factor of ~13. Our work could facilitate the development of ultracompact chiral classical and quantum light sources. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_09806 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical cavities Pan, Feng Li, Xin Johnson, Amalya C. Dhuey, Scott Saunders, Ashley Hu, Meng-Xia Dixon, Jefferson P. Dagli, Sahil Lau, Sze-Cheung Weng, Tingting Chen, Chih-Yi Zeng, Jun-Hao Apte, Rajas Heinz, Tony F. Liu, Fang Deng, Zi-Lan Dionne, Jennifer A. Optics Materials Science Transition metal dichalcogenides possess valley pseudospin, enabling coupling between photon spin and electron spin for classical and quantum information processing. However, rapid valley-dephasing processes have impeded the development of scalable, high-performance valleytronic devices operating at room temperature. Here we demonstrate that a chiral resonant metasurface can enable room-temperature valley-selective emission in MoSe2 monolayers independent of excitation polarization. This platform provides circular eigen-polarization states with a high quality factor (Q-factor) and strong chiral near-field enhancement. The fabricated Si chiral metasurfaces exhibit chiroptical resonances with Q-factors up to 450 at visible wavelengths. We reveal degrees of circular polarization (DOP) reaching a record high of 0.5 at room temperature. Our measurements show that the high DOP can be attributed to the significantly increased chiroptical local density of states, which enhances valley-specific radiative transition rates by a factor of ~13. Our work could facilitate the development of ultracompact chiral classical and quantum light sources. |
| title | Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical cavities |
| topic | Optics Materials Science |
| url | https://arxiv.org/abs/2409.09806 |