Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing
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arXiv
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| Auteurs principaux: | , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866929502258462720 |
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| author | Zheng, Yunzhe Yu, Heng Xin, Tianjiao Xue, Kan-Hao Xu, Yilin Gao, Zhaomeng Liu, Cheng Zhao, Qiwendong Zheng, Yonghui Miao, Xiangshui Cheng, Yan |
| author_facet | Zheng, Yunzhe Yu, Heng Xin, Tianjiao Xue, Kan-Hao Xu, Yilin Gao, Zhaomeng Liu, Cheng Zhao, Qiwendong Zheng, Yonghui Miao, Xiangshui Cheng, Yan |
| contents | Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE devices are governed by the dynamics of metastable domain structure evolution. Insightful design of FE devices for encoding and storage necessitates a comprehensive understanding of the internal structural evolution. Here, we demonstrate the evolution of domain structures through a transient polar orthorhombic (O)-$Pmn2_1$-like configuration via $in$-$situ$ biasing on $\mathrm{TiN/Hf_{0.5}Zr_{0.5}O_2/TiN}$ capacitors within spherical aberration-corrected transmission electron microscope, combined with theoretical calculations. Furthermore, it is directly evidenced that the non-FE O-$Pbca$ transforms into the FE O-$Pca2_1$ phase under electric field, with the polar axis of the FE-phase aligning towards the bias direction through ferroelastic transformation, thereby enhancing FE polarization. As cycling progresses further, however, the polar axis collapses, leading to FE degradation. These novel insights into the intricate structural evolution path under electrical field cycling facilitate optimization and design strategies for $\mathrm{HfO_2}$-based FE memory devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_11217 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing Zheng, Yunzhe Yu, Heng Xin, Tianjiao Xue, Kan-Hao Xu, Yilin Gao, Zhaomeng Liu, Cheng Zhao, Qiwendong Zheng, Yonghui Miao, Xiangshui Cheng, Yan Materials Science Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE devices are governed by the dynamics of metastable domain structure evolution. Insightful design of FE devices for encoding and storage necessitates a comprehensive understanding of the internal structural evolution. Here, we demonstrate the evolution of domain structures through a transient polar orthorhombic (O)-$Pmn2_1$-like configuration via $in$-$situ$ biasing on $\mathrm{TiN/Hf_{0.5}Zr_{0.5}O_2/TiN}$ capacitors within spherical aberration-corrected transmission electron microscope, combined with theoretical calculations. Furthermore, it is directly evidenced that the non-FE O-$Pbca$ transforms into the FE O-$Pca2_1$ phase under electric field, with the polar axis of the FE-phase aligning towards the bias direction through ferroelastic transformation, thereby enhancing FE polarization. As cycling progresses further, however, the polar axis collapses, leading to FE degradation. These novel insights into the intricate structural evolution path under electrical field cycling facilitate optimization and design strategies for $\mathrm{HfO_2}$-based FE memory devices. |
| title | Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing |
| topic | Materials Science |
| url | https://arxiv.org/abs/2409.11217 |