Interplay of Electron Trapping by Defect Midgap State and Quantum Confinement to Optimize Hot Carrier Effect in a Nanowire Structure

Fuente: arXiv
Salvato in:
Dettagli Bibliografici
Autori principali: Makhfudz, Imam, Esmaielpour, Hamidreza, Hajati, Yaser, Koblmüller, Gregor, Cavassilas, Nicolas
Natura: Preprint
Pubblicazione: 2024
Soggetti:
Accesso online:
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
_version_ 1866910620065988608
author Makhfudz, Imam
Esmaielpour, Hamidreza
Hajati, Yaser
Koblmüller, Gregor
Cavassilas, Nicolas
author_facet Makhfudz, Imam
Esmaielpour, Hamidreza
Hajati, Yaser
Koblmüller, Gregor
Cavassilas, Nicolas
contents Hot carrier effect, a phenomenon where charge carriers generated by photon absorption remain energetic by not losing much energy, has been one of the leading strategies in increasing solar cell efficiency. Nanostructuring offers an effective approach to enhance hot carrier effect via the spatial confinement, as occurring in a nanowire structure. The recent experimental study by Esmaielpour et al. [ACS Applied Nano Materials 7, 2817 (2024)] reveals a fascinating non-monotonic dependence of the hot carrier effect in nanowire array on the diameter of the nanowire, contrary to what might be expected from quantum confinement alone. We show that this non-monotonic behavior can be explained by a simple model for electron energy loss that involves two principal mechanisms. First, electron-phonon scattering, that increases with nanowire diameter, leading to hot carrier effect that decreases with increasing diameter. Second, electron capture by a defect level within band gap, that is, a midgap state, that decreases with nanowire diameter, leading to hot carrier effect that increases with increasing diameter. The two mechanisms balance at a certain diameter corresponding to optimal hot carrier effect. Our result offers a guideline to optimize hot carrier effect in nanowire solar cells and ultimately their efficiency by adjusting the dimensions and micro-structural properties of nanowires.
format Preprint
id arxiv_https___arxiv_org_abs_2409_11544
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Interplay of Electron Trapping by Defect Midgap State and Quantum Confinement to Optimize Hot Carrier Effect in a Nanowire Structure
Makhfudz, Imam
Esmaielpour, Hamidreza
Hajati, Yaser
Koblmüller, Gregor
Cavassilas, Nicolas
Mesoscale and Nanoscale Physics
Materials Science
Hot carrier effect, a phenomenon where charge carriers generated by photon absorption remain energetic by not losing much energy, has been one of the leading strategies in increasing solar cell efficiency. Nanostructuring offers an effective approach to enhance hot carrier effect via the spatial confinement, as occurring in a nanowire structure. The recent experimental study by Esmaielpour et al. [ACS Applied Nano Materials 7, 2817 (2024)] reveals a fascinating non-monotonic dependence of the hot carrier effect in nanowire array on the diameter of the nanowire, contrary to what might be expected from quantum confinement alone. We show that this non-monotonic behavior can be explained by a simple model for electron energy loss that involves two principal mechanisms. First, electron-phonon scattering, that increases with nanowire diameter, leading to hot carrier effect that decreases with increasing diameter. Second, electron capture by a defect level within band gap, that is, a midgap state, that decreases with nanowire diameter, leading to hot carrier effect that increases with increasing diameter. The two mechanisms balance at a certain diameter corresponding to optimal hot carrier effect. Our result offers a guideline to optimize hot carrier effect in nanowire solar cells and ultimately their efficiency by adjusting the dimensions and micro-structural properties of nanowires.
title Interplay of Electron Trapping by Defect Midgap State and Quantum Confinement to Optimize Hot Carrier Effect in a Nanowire Structure
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2409.11544