Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$
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arXiv
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| Autores principales: | , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866929503620562944 |
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| author | Corbae, Paul Engel, Aaron N. Dong, Jason T. Yánez-Parreño, Wilson J. Lu, Donghui Hashimoto, Makoto Fedorov, Alexei Palmstrøm, Christopher J. |
| author_facet | Corbae, Paul Engel, Aaron N. Dong, Jason T. Yánez-Parreño, Wilson J. Lu, Donghui Hashimoto, Makoto Fedorov, Alexei Palmstrøm, Christopher J. |
| contents | Bismuth antimony alloys (Bi$_x$Sb$_{1-x}$) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk electronic structure. In the two-dimensional limit, it is a suitable system to study the quantum spin Hall effect. In this work we grow epitaxial, single orientation thin films of Bi$_x$Sb$_{1-x}$ on an InSb(111)B substrate down to two bilayers where hybridization effects should gap out the topological surface states. Supported by a tight-binding model, spin- and angle-resolved photoemission spectroscopy data shows pockets at the Fermi level from the topological surface states disappear as the bulk gap increases from confinement. Evidence for a gap opening in the topological surface states is shown in the ultrathin limit. Finally, we observe spin-polarization approaching unity from the topological surface states in 10 bilayer films. The growth and characterization of ultrathin Bi$_x$Sb$_{1-x}$ alloys suggest ultrathin films of this material system can be used to study two-dimensional topological physics as well as applications such as topological devices, low power electronics, and spintronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_11705 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$ Corbae, Paul Engel, Aaron N. Dong, Jason T. Yánez-Parreño, Wilson J. Lu, Donghui Hashimoto, Makoto Fedorov, Alexei Palmstrøm, Christopher J. Materials Science Bismuth antimony alloys (Bi$_x$Sb$_{1-x}$) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk electronic structure. In the two-dimensional limit, it is a suitable system to study the quantum spin Hall effect. In this work we grow epitaxial, single orientation thin films of Bi$_x$Sb$_{1-x}$ on an InSb(111)B substrate down to two bilayers where hybridization effects should gap out the topological surface states. Supported by a tight-binding model, spin- and angle-resolved photoemission spectroscopy data shows pockets at the Fermi level from the topological surface states disappear as the bulk gap increases from confinement. Evidence for a gap opening in the topological surface states is shown in the ultrathin limit. Finally, we observe spin-polarization approaching unity from the topological surface states in 10 bilayer films. The growth and characterization of ultrathin Bi$_x$Sb$_{1-x}$ alloys suggest ultrathin films of this material system can be used to study two-dimensional topological physics as well as applications such as topological devices, low power electronics, and spintronics. |
| title | Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2409.11705 |