Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866913507786620928 |
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| author | Yue, Ziqin Huang, Jianwei Wang, Ruohan Li, Jia-Wan Rong, Hongtao Guo, Yucheng Wu, Han Zhang, Yichen Kono, Junichiro Zhou, Xingjiang Hou, Yusheng Wu, Ruqian Yi, Ming |
| author_facet | Yue, Ziqin Huang, Jianwei Wang, Ruohan Li, Jia-Wan Rong, Hongtao Guo, Yucheng Wu, Han Zhang, Yichen Kono, Junichiro Zhou, Xingjiang Hou, Yusheng Wu, Ruqian Yi, Ming |
| contents | Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $Γ$. Here, we present a controlled methodology to gradually remove Se atoms from the surface Se-Bi-Se-Bi-Se quintuple layers, eventually forming bilayer-Bi on top of the quintuple bulk. Our method allows us to track the topological surface state and confirm its robustness throughout the surface modification. Importantly, we report a relocation of the topological Dirac cone in both real space and momentum space, as the top surface layer transitions from quintuple Se-Bi-Se-Bi-Se to bilayer-Bi. Additionally, charge transfer among different surface layers is identified. Our study provides a precise method to manipulate surface configurations, allowing for the fine-tuning of the topological surface states in Bi$_2$Se$_3$, which represents a significant advancement towards nano-engineering of topological states. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_12423 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching Yue, Ziqin Huang, Jianwei Wang, Ruohan Li, Jia-Wan Rong, Hongtao Guo, Yucheng Wu, Han Zhang, Yichen Kono, Junichiro Zhou, Xingjiang Hou, Yusheng Wu, Ruqian Yi, Ming Materials Science Mesoscale and Nanoscale Physics Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $Γ$. Here, we present a controlled methodology to gradually remove Se atoms from the surface Se-Bi-Se-Bi-Se quintuple layers, eventually forming bilayer-Bi on top of the quintuple bulk. Our method allows us to track the topological surface state and confirm its robustness throughout the surface modification. Importantly, we report a relocation of the topological Dirac cone in both real space and momentum space, as the top surface layer transitions from quintuple Se-Bi-Se-Bi-Se to bilayer-Bi. Additionally, charge transfer among different surface layers is identified. Our study provides a precise method to manipulate surface configurations, allowing for the fine-tuning of the topological surface states in Bi$_2$Se$_3$, which represents a significant advancement towards nano-engineering of topological states. |
| title | Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2409.12423 |