Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
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arXiv
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866929506059550720 |
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| author | Venkatakrishnarao, Dasari Mishra, Abhishek Tarn, Yaoju Bosman, Michel Lee, Rainer Das, Sarthak Mukherjee, Subhrajit Talha-Dean, Teymour Zhang, Yiyu Teo, Siew Lang Chai, Jian Wei Bussolotti, Fabio Goh, Kuan Eng Johnson Lau, Chit Siong |
| author_facet | Venkatakrishnarao, Dasari Mishra, Abhishek Tarn, Yaoju Bosman, Michel Lee, Rainer Das, Sarthak Mukherjee, Subhrajit Talha-Dean, Teymour Zhang, Yiyu Teo, Siew Lang Chai, Jian Wei Bussolotti, Fabio Goh, Kuan Eng Johnson Lau, Chit Siong |
| contents | Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO2 dielectric on 2D semiconductors with atomically smooth interfaces. Using this approach, we fabricated 2D WS2 top-gated transistors with subthreshold swings down to 74.5 mV/dec, gate leakage current density below 10-6 A/cm2, and negligible hysteresis. We further demonstrate a one-step van der Waals integration of contacts and dielectrics on graphene. This can offer a scalable approach toward integrating entire prefabricated device stack arrays with 2D materials. Our work provides a scalable solution to address the crucial dielectric engineering challenge for 2D semiconductors, paving the way for high-performance 2D electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_12485 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics Venkatakrishnarao, Dasari Mishra, Abhishek Tarn, Yaoju Bosman, Michel Lee, Rainer Das, Sarthak Mukherjee, Subhrajit Talha-Dean, Teymour Zhang, Yiyu Teo, Siew Lang Chai, Jian Wei Bussolotti, Fabio Goh, Kuan Eng Johnson Lau, Chit Siong Materials Science Mesoscale and Nanoscale Physics Applied Physics Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO2 dielectric on 2D semiconductors with atomically smooth interfaces. Using this approach, we fabricated 2D WS2 top-gated transistors with subthreshold swings down to 74.5 mV/dec, gate leakage current density below 10-6 A/cm2, and negligible hysteresis. We further demonstrate a one-step van der Waals integration of contacts and dielectrics on graphene. This can offer a scalable approach toward integrating entire prefabricated device stack arrays with 2D materials. Our work provides a scalable solution to address the crucial dielectric engineering challenge for 2D semiconductors, paving the way for high-performance 2D electronics. |
| title | Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2409.12485 |