Micro-transfer printing of GaSb optoelectronics chips for mid-infrared silicon photonics integrated circuits
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arXiv
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| Format: | Preprint |
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2024
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| author | Tuorila, Heidi Viheriälä, Jukka Arafat, Yeasir Atar, Fatih Bilge Gunning, Fatima Corbett, Brian Guina, Mircea |
| author_facet | Tuorila, Heidi Viheriälä, Jukka Arafat, Yeasir Atar, Fatih Bilge Gunning, Fatima Corbett, Brian Guina, Mircea |
| contents | 3D integration of GaSb-based gain chips on a silicon photonics platform using micro-transfer printing is demonstrated for the first time. The release process of GaSb coupons, and their transfer for the demonstration of hybrid GaSb/Silicon-photonics on-chip external cavity lasers is reported. A methodology to evaluate the key features of the gain chip coupons, namely the quality of the etched facets and the facet coating deposited using a wafer-level process, is introduced. The characterization provides insight into the fabrication factors limiting the performance of the gain coupons. The level of performance achieved for the transfer printing process offers a solid landmark for the development of photonics integration technology operating at the 2-3 $μ$m wavelength range. This is instrumental for the deployment of mid-IR photonic integration technology in emerging applications related to gas and biomarker sensing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_13413 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Micro-transfer printing of GaSb optoelectronics chips for mid-infrared silicon photonics integrated circuits Tuorila, Heidi Viheriälä, Jukka Arafat, Yeasir Atar, Fatih Bilge Gunning, Fatima Corbett, Brian Guina, Mircea Applied Physics 3D integration of GaSb-based gain chips on a silicon photonics platform using micro-transfer printing is demonstrated for the first time. The release process of GaSb coupons, and their transfer for the demonstration of hybrid GaSb/Silicon-photonics on-chip external cavity lasers is reported. A methodology to evaluate the key features of the gain chip coupons, namely the quality of the etched facets and the facet coating deposited using a wafer-level process, is introduced. The characterization provides insight into the fabrication factors limiting the performance of the gain coupons. The level of performance achieved for the transfer printing process offers a solid landmark for the development of photonics integration technology operating at the 2-3 $μ$m wavelength range. This is instrumental for the deployment of mid-IR photonic integration technology in emerging applications related to gas and biomarker sensing. |
| title | Micro-transfer printing of GaSb optoelectronics chips for mid-infrared silicon photonics integrated circuits |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2409.13413 |